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Browsing by Author "Hung, BE"

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    High work function IrxSi gates on HfAlON p-MOSFETs
    (2006-02-01)
    Wu, CH
    ;
    Yu, DS
    ;
    Chin, A
    ;
    Wang, SJ
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    Li, MF
    We have fabricated the fully silicided IrxSi-gated p-MOSFETs on HfAlON gate dielectric with 1.7-mn equivalent oxide thickness. After 950 degrees C rapid thermal annealing, the fully IrxSi/HfAlON device has high effective work function of 4.9 eV, high peak hole mobility of 80 cm(2)/V.s, and the advantage of being process compatible to the current VLSI fabrication line.