Browsing by Author "Hung, Chen-Chun"

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CMOS-MEMS Based Optical Electrostatic Phase Shifter Array With Low Driving Voltage and High Fill Factor
(2010-09-01)
Chiou, Jin-Chern
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Hung, Chen-Chun
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Shieh, Li-Jung
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電機工程學系
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電控工程研究所
This work develops a novel 4 x 4 optical phase shifting micromirror array that achieves a lambda/4 vertical displacement and makes the mirror peak-to-valley deformation within lambda/10 (514 nm light source). Each individual micromirror pixel is controllable and driven by an electrostatic parallel plate actuator. The mirror reflective surface is an aluminum layer with a high optical reflectivity exceeding 90%. This device achieves a high fill factor of more than 90% without an additional flip-chip bonding process due to the parallel plate actuator and the hidden suspension beam structures. The phase shifter array is fabricated using the Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 mu m 2p4m CMOS process and post-CMOS process. An in-house post-process is utilized to reserve a 40 mu m thick bulk-silicon under the 200 mu m x 200 mu m mirror. This eliminates mirror deformation from residual stress after the device is released. The micromirror demonstrates a vertical displacement of lambda/4 at only 3 V and the resonant frequency is 3.6 kHz. Industry can use this phase-shifting micromirror array as a spatial light modulator in holographic data storage systems in the future.
Design, fabrication and actuation of a MEMS-based image stabilizer for photographic cell phone applications
(2010-07-01)
Chiou, Jin-Chern
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Hung, Chen-Chun
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Lin, Chun-Ying
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電控工程研究所
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Institute of Electrical and Control Engineering
This work presents a MEMS-based image stabilizer applied for anti-shaking function in photographic cell phones. The proposed stabilizer is designed as a two-axis decoupling XY stage 1.4 x 1.4 x 0.1 mm(3) in size, and adequately strong to suspend an image sensor for anti-shaking photographic function. This stabilizer is fabricated by complex fabrication processes, including inductively coupled plasma (ICP) processes and flip-chip bonding technique. Based on the special designs of a hollow handle layer and a corresponding wire-bonding assisted holder, electrical signals of the suspended image sensor can be successfully sent out with 32 signal springs without incurring damage during wire-bonding packaging. The longest calculated traveling distance of the stabilizer is 25 mu m which is sufficient to resolve the anti-shaking problem in a three-megapixel image sensor. Accordingly, the applied voltage for the 25 mu m moving distance is 38 V. Moreover, the resonant frequency of the actuating device with the image sensor is 1.123 kHz.
Design, Fabrication, and Actuation of Micro-Electro-Mechanical System-Based Image Stabilizer
(2010)
Chiou, Jin-Chern
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Hung, Chen-Chun
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Lin, Chun-Ying
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Lin, Yung-Jiun
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電控工程研究所
In this investigation, we present a two dimensional high aspect ratio XY stage, designed as an image stabilizer. This stabilizer is 8 x 8 x 0.75 mm(3), and sufficiently strong to support a suspended image sensor for anti-shaking photographic function. This stabilizer is fabricated by the silicon-on-glass (SOG) process including inductively coupled plasma reactive ion etching (ICP-RIE) processes, in which the anchor layer, pre-etching layer and structure layers are identified without an additional release step as is required in traditional silicon-on-insulator (SOI) wafer etching process. When an actuator is fabricated, flip-chip bonding is adopted to attach a 3 megapixel image sensor to this device. The longest calculated traveling distance of the stabilizer is 25 mu m and special stoppers are designed to prevent the actuator from moving out of range, and sticking to the side by pull-in phenomenon. Accordingly, the applied voltage at the 25 mu m moving distance is 84 V. Furthermore, the dynamic resonant frequency of the actuating device with an image sensor is 1.013 kHz. (C) 2010 The Japan Society of Applied Physics
Microprobe array structure and method for manufacturing the same
(2008-01-10)
Chiou, Jin-Chern
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Chang, Chih-Wei
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Hung, Chen-Chun
A microprobe array structure with self-stabilization capability and a method for manufacturing the same are proposed. The microprobe array structure is used to sense various biopotential signals, and is characterized in that the etching parameters are controlled during etching to manufacture a microprobe structure with a reduced bottom cross section so that the microprobe can be firmly stabilized in the skin tissue. Moreover, a conducting layer is formed on the microprobe to sense signals. A design of electric isolation between microprobes is also proposed. The microprobe array can therefore be used for the measurement of various biopotential signals, and can also be used as a stimulus.
Novel electrostatic MOEMS phase shifter array using CMOS-MEMS process
(2010-01-01)
Chiou, Jin-Chern
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Hung, Chen-Chun
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Shieh, Li-Jung
;
Tsai, Zhao-Long
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電控工程研究所
We present a 3 x 3 micro-optoelectromechanical systems (MOEMS) phase shifter array that achieves a lambda/4 vertical displacement with peak-to-valley deformation within lambda/10 (514-nm light source). The mirror reflective surface is made of an aluminum layer with a high optical reflectivity exceeding 90%. Each individual micromirror pixel is controlled and driven by comb drive actuators. The phase shifter array is fabricated using the Taiwan Semiconductor Manufacturing Company 0.35-mu m 2P4M complementary metal-oxide semiconductor process. In-house post-processing is utilized to reserve a 40-mu m-thick bulk-silicon under the 200 mu m x 200 mu m mirror. This eliminates mirror deformation from residual stress after the device is released. The micromirror demonstrates a vertical displacement of lambda/4 at 38 V. The device resonant frequency is 3.71 kHz, and the fill factor is 0.65. This MOEMS phase shifter array can be used as a spatial light modulator in holographic data storage systems. (C) 2010 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3280264]
Transparent microprobe array fabricated by MEMS hot embossing technology for photodynamic therapy application
(2010-05-10)
Hung, Chen-Chun
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Chiou, Jin-Chern
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Chang, Chih-Wei
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電控工程研究所
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Institute of Electrical and Control Engineering
This work describes a novel transparent micro-needle array for photodynamic therapy (PDT) applications. This micro-needle array, with 250 um in height and 35 um in diameter, was placed onto skin and penetrated the cuticle yet not reaching the corium layer, so as to avoid pain and bleeding but achieve superior light transmission efficiency. For PDT applications, this design can significantly reduce the required incident power and therefore avoid additional damage to surrounding healthy tissue. Practical in-vivo test on human skin demonstrates the improved power transmission efficiency (PTE) of two types of needle arrays is 1.41 and 1.71 times better than the condition without using micro-needle array.