Browsing by Author "Hung, James"

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High-temperature magnetoresistance study of a magnetic tunnel junction
(2006-09-01)
Chen, D. C.
;
Yao, Y. D.
;
Chen, C. M.
;
Hung, James
;
Chen, Y. S.
The thermal stability and the spin transportation phenomenon at room temperature and 140 degrees C of a series of magnetic tunneling junctions with the structure of bottom electrode/PtMn/Pinned layer/ AlO(x)/CoFe/NiFe/top electrode have been investigated. The MR ratio decreases from 33.5% at room temperature to 29% at 140 degrees C. The MR ratio at room temperature increases roughly 0.8% after thermal treatment at temperatures above 60 degrees C. This is related to the thermal relaxation of the strains existing in the samples. (C) 2006 Elsevier B.V. All rights reserved.