Browsing by Author "Hung, Jo-Chun"

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A New Microscopic Formalism for the Electron Scattering by Remote "Paired" Dipoles in HKMG MOSFETs
(2016)
Hsieh, Shang-Hsun
;
Hung, Jo-Chun
;
Chen, Ming-Jer
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We devise a new microscopic formalism for the remote dipole scattering (RDS) limited relaxation time in the inversion layers of HKMG MOSFETs. This formalism can apply to two different dipole configurations: (i) a "one dipole" configuration and (ii) a "paired dipoles" configuration. We find that when fitting the inversion-layer effective electron mobility measured from the industry-level hafnium-based metal gate MOSFETs, the former configuration yields a large value of the HK/IL interface dipole density of around 1015 cm(-2), accompanied by a large threshold voltage shift Delta V-th_dipole of 12 V. These values are comparable with those of the existing Monte Carlo simulation. More importantly, in case of the latter configuration (paired dipoles) plus the experimentally determined fixed charges, the corresponding values can be significantly reduced to 10(14) cm(-2) and 2 V, which are quite close to the experimental estimations in the literature.
Two Competing Limiters in MOSFETs Scaling: Neutral Defects and S/D Plasmons
(2016)
Hsieh, Shang-Hsun
;
Hung, Jo-Chun
;
Weng, Heng-Jui
;
Tsai, Ming-Fu
;
Chiang, Chih-Chi
On the industrial HKMG silicon MOSFETs with different channel lengths L down to 14 nm, we present high-resolution TEM cross-section images to highlight interstitial defects in the channel near the source and drain. To examine such neutral defects, we devise a new 2D microscopic scattering model and use it to extract the apparent neutral defects density from the measured inversion-layer effective mobility. We find that for L > 25 nm, the extracted defect densities are independent of temperature, as expected. However, for L < 25 nm, the plasmons in the highly doped source and drain regions prevail over neutral defects. Further measured degradation in the virtual source velocity at saturation matches that of full Coulomb Monte Carlo simulation, for the first time experimentally confirming S/D plasmons as the dominant mechanism for L < 25 nm.