Browsing by Author "Hung, Jui-Yi"

Now showing 1 - 6 of 6

Amorphous carbon coated silicon nanotips fabricated by MPCVD using anodic aluminum oxide as the template
(2007)
Chen, Te-Ming
;
Pan, Fu-Ming
;
Hung, Jui-Yi
;
Chang, L.
;
Wu, Shich-Chuan
We have used nanoporous anodic aluminum oxide (AAO) as a template to fabricate amorphous carbon (alpha-C) coated silicon nanotips by microwave plasma chemical vapor deposition (MPCVD). During the preparation of the well-ordered AAO pore channel array, an underlying TiN layer was anodically oxidized as well in the late stage of the AAO anodization, forming titanium oxide nanomasks for Si nanotip fabrication. The titanium oxide nanomasks were then used to transfer the arrangement pattern of the AAO pore channel array to the Si substrate by plasma etch in the MPCVD system and, therefore, a well-ordered Si nanotip array was produced. An alpha-C layer similar to 5 nm thick was in situ deposited on the Si nanotips during the MPCVD process. The alpha-C layer was rich in nanocrystalline graphitic carbons according to Raman and Auger electron spectroscopies. The nanocrystalline graphitic carbons in the coating and the sharp tip shape made the Si nanotip a good field emitter and a field enhancement factor of similar to 659 was obtained. (c) 2007 The Electrochemical Society.
Fabrication and field-emission characteristics of TiN nanorods with a concave top surface
(2008)
Chen, Te-Ming
;
Hung, Jui-Yi
;
Pan, Fu-Ming
;
Chang, L.
;
Sheu, J. -T.
Well-ordered titanium nitride nanorods were fabricated by reactive ion etch using titanium oxide nanodots as the mask, which were prepared using the anodic aluminum oxide templation method. The TiN nanorods exhibited a concave top surface with a protruding edge. Due to the protruding top edge and a high aspect ratio, the TiN nanorods showed a low turn-on voltage of 1.6 V/mu m. The ellipsoidal cylinder model was used to evaluate the field-enhancement effect of the protruding edge, and an underestimation by similar to 26% was found as compared with the enhancement factor derived from the Fowler-Nordheim plot. (C) 2008 The Electrochemical Society.
Full-Digital High Throughput Design of Adaptive Decision Feedback Equalizers Using Coefficient-Lookahead
(2015-01-01)
He, Wen-Quan
;
Lin, Yu-Chun
;
Hung, Jui-Yi
;
Jou, Shyh-Jye
;
電子工程學系及電子研究所
This paper proposes a novel full-digital architecture of adaptive decision feedback equalizer (ADFE) for wireline 2-level pulse amplitude modulation (2-PAM) systems. It is well known that the feedback loop in DFE limits the greatest achievable speed. The proposed scheme begins by deriving coefficient-lookahead concept based on a reasonable assumption, whereupon a preliminary architecture can be implemented using the formula derived. Furthermore, according to channel characteristics, the formula derived can be simplified to break the feedback loop. Finally, the architecture can be easily pipelined and processed in parallel to achieve high throughput rate. Thus, the proposed design is a high speed design with parallel and pipeline architecture. This paper used a TSMC 40 nm CMOS process to fabricate the proposed design with a build-in self-test (BIST) circuit. The measured results show that the throughput rate is up to 16 Gbps.
Managerial Overconfidence and Share Repurchases
(2013-03-01)
Shu, Pei-Gi
;
Yeh, Yin-Hua
;
Chiang, Tsui-Lin
;
Hung, Jui-Yi
;
資訊管理與財務金融系註：原資管所+財金所
Following prior studies, we use keywords in press portrayals to gauge managerial overconfidence. We hypothesize that managerial overconfidence is related to a manager's perception that the firm is undervalued. Results from 2744 share repurchase programs launched by 783 listed firms in Taiwan confirm this hypothesis. We find that managerial overconfidence is positively correlated with the intensity of share repurchasing, which is measured by scale, execution, frequency, and the difference between the announced price and post-execution price. Moreover, the programs launched by overconfident managers were not undervalued and therefore were associated with reduced post-announcement returns.
Pulse Electrodeposition of Iridium Oxide on Silicon Nanotips for Field Emission study
(2009-05-01)
Chen, Te-Ming
;
Hung, Jui-Yi
;
Pan, Fu-Ming
;
Chang, L.
;
Wu, Shich-Chuan
To improve electron field emission properties of anodic aluminum oxide (AAO) templated Si nanotips, IrO(2) nanoparticles were deposited on the nanotips using bipolar pulse electrodeposition method. The IrO(2) nanoparticles had a uniform size distribution with an average value of similar to 4 nm, and well dispersed on the ordered Si nanotips. Due to the small radius and a lower work function, the IrO(2)/Si nanotip exhibited field emission properties better than the bare Si nanotip with a field enhancement factor of similar to 128. The SEM and TEM were utilized to investigate the structure and morphology. The physical and chemical properties were evaluated XRD and X-ray photoelectron spectroscopy (XPS).
TiO2/GeOxNy stacked gate dielectrics for Ge-MOSFETs
(2007-12-01)
Bera, M. K.
;
Mahata, C.
;
Chakraborty, A. K.
;
Nandi, S. K.
;
Tiwari, Jitendra N.
In this work, we present the results of physical and electrical characterization of Ti-based high-k gate dielectrics on Ge substrates. Titanium tetrakis isopropoxide (TTIP) was used as the organometallic source for the deposition of ultra-thin TiO2 films on p-Ge (100) at low temperature (< 200 degrees C) by plasma enhanced chemical vapor deposition (PECVD) technique in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of similar to 65 Pa. The presence of an ultra-thin lossy GeO2 interfacial layer between the deposited high-k film and the substrate, results in frequency-dependent capacitance-voltage (C-V) characteristics in strong accumulation and a high interface state density (similar to 10(13) cm(-2) eV(-1)). To improve the electrical properties, nitrogen engineering has been employed to convert the lossy GeO2 interfacial layer to its oxynitride, thus forming TiO2/GeOxNy/Ge stacked-gate structure with improved interface/electrical properties. Different N sources, such as NO, NH3 and NO/NH3, have been used for nitrogen engineering. XPS and Raman spectroscopy analyses have been used for surface morphological study. Electrical properties, such as gate leakage current density, interface state density, charge trapping, flatband voltage shift, etc, have been studied in detail for TiO2/GeOxNy/Ge MIS capacitors using the current-voltage (I-V), capacitance-voltage (C-V), conductance-voltage (G-V) and stress (both constant voltage and current) measurements. Although a significant improvement in electrical characteristics has been observed after nitridation in general, the formation of the interfacial GeOxNy layer, obtained from NO-plasma nitridation, is found to provide the maximum improvement among all the nitridation techniques used in this study. It is shown that the insertion of an ultra-thin oxynitride (GeOxNy) interfacial layer is advantageous for producing gate-quality TiO2 high-k dielectric stacks on Ge substrates.