Browsing by Author "Hung, Shih Wei"

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Charge storage characteristics of iridium silicide nanocrystals embedded in SiO(2) matrix for nonvolatile memory application
(2010-10-01)
Wang, Terry Tai-Jui
;
Hung, Shih Wei
;
Chuang, Pi Kai
;
Kuo, Cheng Tzu
;
材料科學與工程學系
In this work, the nanostructure-assisted "Al/SiO(2)/Ir-silicide-NCs/SiO(2)/P-Si-sub/Al" stack with iridium silicide nanocrystals (Ir-silicide-NCs) embedded between two SiO(2) layers has been demonstrated in the application of nonvolatile memory for the first time. A significant memory window voltage of 14.2 Vat sweeps of +/- 10 V by capacitance-voltage measurement can be reached, when well-distributed Ir-silicide-NCs are observed in cross-sectional TEM examination. In this case, the trap density is estimated to be about 1.06 x 10(13) cm(-2), indicating a high trapping efficiency stack for nonvolatile memory application. (C) 2010 Elsevier B.V. All rights reserved.
Charge storage characteristics of iridium silicide nanocrystals embedded in SiO2 matrix for nonvolatile memory application
(2010-10-01)
Wang, Terry Tai-Jui
;
Hung, Shih Wei
;
Chuang, Pi Kai
;
Kuo, Cheng Tzu
;
材料科學與工程學系
In this work, the nanostructure-assisted "Al/SiO2/Ir-silicide-NCs/SiO2/P-Si-sub/Al" stack with iridium silicide nanocrystals (Ir-silicide-NCs) embedded between two SiO2 layers has been demonstrated in the application of nonvolatile memory for the first time. A significant memory window voltage of 14.2 Vat sweeps of +/- 10 V by capacitance-voltage measurement can be reached, when well-distributed Ir-silicide-NCs are observed in cross-sectional TEM examination. In this case, the trap density is estimated to be about 1.06 x 10(13) cm(-2), indicating a high trapping efficiency stack for nonvolatile memory application. (C) 2010 Elsevier B.V. All rights reserved.