Browsing by Author "Hung, Shih-Wei"

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Iridium Nanocrystal Thin-Film Transistor Nonvolatile Memory with Si(3)N(4)/SiO(2) Stack of Asymmetric Tunnel Barrier
(2011-05-01)
Wang, Terry Tai-Jui
;
Lu, Tien-Lin
;
Wu, Chien-Hung
;
Liu, Yu-Cheng
;
Hung, Shih-Wei
Iridium nanocrystals (Ir-NCs) lying on the Si(3)N(4)/SiO(2) tunneling layer have been demonstrated and Ir-NC-assisted thin-film transistor nonvolatile memory devices were successfully developed. Results show that Ir-NCs with a number density of similar to 6 x 10(11) cm(-2) and a particle diameter of 4 to 12 nm can successfully be fabricated as charge trapping centers. Owing to the asymmetric SiO(2)/Si(3)N(4) tunneling layer that increases programming/erasing efficiency, a significant memory window of 5.5 V has potential to be applied to multibit memory devices. Furthermore, after 10(4) s, the memory window is still about 4.0 V in logic states. (C) 2011 The Japan Society of Applied Physics
Iridium Nanocrystal Thin-Film Transistor Nonvolatile Memory with Si3N4/SiO2 Stack of Asymmetric Tunnel Barrier
(2011-05-01)
Wang, Terry Tai-Jui
;
Lu, Tien-Lin
;
Wu, Chien-Hung
;
Liu, Yu-Cheng
;
Hung, Shih-Wei
Iridium nanocrystals (Ir-NCs) lying on the Si3N4/SiO2 tunneling layer have been demonstrated and Ir-NC-assisted thin-film transistor nonvolatile memory devices were successfully developed. Results show that Ir-NCs with a number density of similar to 6 x 10(11) cm(-2) and a particle diameter of 4 to 12 nm can successfully be fabricated as charge trapping centers. Owing to the asymmetric SiO2/Si3N4 tunneling layer that increases programming/erasing efficiency, a significant memory window of 5.5 V has potential to be applied to multibit memory devices. Furthermore, after 10(4) s, the memory window is still about 4.0 V in logic states. (C) 2011 The Japan Society of Applied Physics
Low temperature Ni-nanocrystals-assisted hybrid polycrystalline silicon thin film transistor for non-volatile memory applications
(2010-10-01)
Wang, Terry Tai-Jui
;
Ma, William Cheng-Yu
;
Hung, Shih-Wei
;
Kuo, Cheng-Tzu
;
材料科學與工程學系
The nickel-nanocrystals (Ni-NCs)-embedded silicon nitride acting as a trapping layer has been successfully demonstrated to manipulate the charging and discharging of electrons in a thin film transistor (TFT) for nonvolatile memory (NVM) applications. Regarding device performance, with and without Ni-NCs in the stack and under a programming/erasing condition of +/-18 V for 1 s, a better threshold voltage shift of 3.2 V can be reached compared to a shift of 2.0 V for a stack without Ni-NCs. The shift is an index representing the value required to differentiate "0" or "1" states during operation. In this case, the diameter range and number density of Ni-NCs are 5-13 nm and 5.3 x 10(11) cm(-2), respectively. (C) 2010 Elsevier B.V. All rights reserved.
Low temperature Ni-nanocrystals-assisted hybrid polycrystalline silicon thin film transistor for non-volatile memory applications
(2010-10-01)
Wang, Terry Tai-Jui
;
Ma, William Cheng-Yu
;
Hung, Shih-Wei
;
Kuo, Cheng-Tzu
;
材料科學與工程學系
The nickel-nanocrystals (Ni-NCs)-embedded silicon nitride acting as a trapping layer has been successfully demonstrated to manipulate the charging and discharging of electrons in a thin film transistor (TFT) for nonvolatile memory (NVM) applications. Regarding device performance, with and without Ni-NCs in the stack and under a programming/erasing condition of +/-18 V for 1 s, a better threshold voltage shift of 3.2 V can be reached compared to a shift of 2.0 V for a stack without Ni-NCs. The shift is an index representing the value required to differentiate "0" or "1" states during operation. In this case, the diameter range and number density of Ni-NCs are 5-13 nm and 5.3 x 10(11) cm(-2), respectively. (C) 2010 Elsevier B.V. All rights reserved.
Orientation-Dependent Room-Temperature Ferromagnetism of FeSi Nanowires and Applications in Nonvolatile Memory Devices
(2011-08-11)
Hung, Shih-Wei
;
Wang, Terry Tai-Jui
;
Chu, Li-Wei
;
Chen, Lih-Juann
;
材料科學與工程學系
Self-catalyzed growth of FeSi nanowires has been achieved via a spontaneous chemical reaction method. The room-temperature ferromagnetism behavior compared to that of bulk FeSi at 4 K is attributed to the enhancement of magnetic coupling behavior correlated to different crystalline orientations. The resistivity of the single-stem FeSi nanowire was determined to be 2650 mu Omega.cm. The fabricated memory devices based on FeSi nanowires showed significant C-V hysteresis, exhibiting the memory effect. The strong memory effect can be accounted for by the presence of defects or dangling bonds on the surface of the FeSi nanowires embedded in the SiO(2) layer, which enhances the trapping density for nonvolatile memory applications.