Browsing by Author "Hung, Yen-Jen"

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Investigation of Carrier Transient Response of Nanopatterned n-ZnO/a-Si(i)/p(+)-Si Photodiodes
(2010-11-01)
Lin, Pei-Hsuan
;
Chen, Cheng-Pin
;
Hung, Yen-Jen
;
Hsu, Shao-Sun
;
Chen, Liang-Yi
We investigated the carrier transient response of the nanopatterned silicon heterojunction photodiodes using ZnO as the n-type semiconductor. The results show that under the constant light illumination intensity, the planar structure has faster carrier response than the nanopatterned amorphous silicon (intrinsic) (a-Si(i)) diodes. It is attributed to a higher number of generated carriers in the nanostructure (due to the lower surface reflectivity) that increases the probability of collisions. On the other hand, the shortest response time of the device with nanopatterned p(+)-Si suggests that carriers can be effectively transported vertically and horizontally through the p-i(intrinsic)-n structure. Furthermore, the wavelength-dependent rise time is correlated to the different transport distance between electrons and holes at different excited wavelengths.
Investigation of Carrier Transient Response of Nanopatterned n-ZnO/a-Si(i)/p(+)-Si Photodiodes
(2010-11-01)
Lin, Pei-Hsuan
;
Chen, Cheng-Pin
;
Hung, Yen-Jen
;
Hsu, Shao-Sun
;
Chen, Liang-Yi
We investigated the carrier transient response of the nanopatterned silicon heterojunction photodiodes using ZnO as the n-type semiconductor. The results show that under the constant light illumination intensity, the planar structure has faster carrier response than the nanopatterned amorphous silicon (intrinsic) (a-Si(i)) diodes. It is attributed to a higher number of generated carriers in the nanostructure (due to the lower surface reflectivity) that increases the probability of collisions. On the other hand, the shortest response time of the device with nanopatterned p(+)-Si suggests that carriers can be effectively transported vertically and horizontally through the p-i(intrinsic)-n structure. Furthermore, the wavelength-dependent rise time is correlated to the different transport distance between electrons and holes at different excited wavelengths.
Investigation of light absorption properties and acceptance angles of nanopatterned GZO/a-Si/p(+)-Si photodiodes
(2010-05-28)
Chen, Cheng-Pin
;
Lin, Pei-Hsuan
;
Hung, Yen-Jen
;
Hsu, Shao-Shun
;
Chen, Liang-Yi
In this work, n-GZO/a:amorphous-Si(i:intrinsic)/p(+)-Si photodiodes are fabricated. We employed a nanosphere lithographic technique to obtain nanoscale patterns on either the a-Si(i) or p(+)-Si surface. As compared with the planar n-GZO/p(+)-Si diode, the devices with nanopatterned a-Si(i) and nanopatterned p(+)-Si substrates show a 32% and 36.2% enhancement of photoresponsivity. Furthermore, the acceptance angle measurement reveals that the nanostructured photodiodes have larger acceptance angles than the planar structure. It also shows that the device with the nanocone structure has a higher acceptance angle than that with the nanorod structure.