Browsing by Author "Huy Binh Do"

Now showing 1 - 11 of 11

Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (001) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition
(2017-08-01)
Minh Thien Huu Ha
;
Sa Hoang Huynh
;
Huy Binh Do
;
Tuan Anh Nguyen
;
Quang Ho Luc
High quality 40 nm GaSb thin film was grown on the zero off-cut Si (001)-oriented substrate using metalorganic chemical vapor deposition with the temperature-graded GaAs buffer layer. The growth time of the GaAs nucleation layer, which was deposited at a low temperature of 490 degrees C, is systematically investigated in this paper. Cross-sections of the high resolution transmission electron microscopy images indicate that the GaAs compound formed 3D-islands first before to quasi-2D islands, and finally formed uniform GaAs layer. The optimum thickness of the 490 degrees C-GaAs layer was found to be 10 nm to suppress the formation of antiphase domain boundaries (APDs). The thin GaAs nucleation layer had a root-mean-square surface roughness of 0.483 nm. This allows the continued high temperature GaAs buffer layer to be achieved with low threading dislocation density of around 7.1 x 10(6) cm(-2) and almost invisible APDs. Finally, a fully relaxed GaSb film was grown on the top of the GaAs/Si heterostructure using interfacial misfit dislocation growth mode. These results indicate that the GaSb epitaxial layer can be grown on Si substrate with GaAs buffer layer for future p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) applications.
Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors
(2016-08)
Quang Ho Luc
;
Cheng, Shou Po
;
Chang, Po Chun
;
Huy Binh Do
;
Chen, Jin Han
In-situ plasma-enhanced atomic layer deposition (PEALD) technique was employed for device passivation to realize a high-performance inversion-mode HfO2/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET). Excellent quality of gate dielectric is enabled by utilizing the PEALD-aluminum nitride as a pre-gate interfacial layer, followed by a post-gate remote-plasma gas treatment. In-situ PEALD treatment led to enhanced dc characteristics, such as drain current, peak transconductance, subthreshold swing, OFF leakage current, and effective electron mobility. X-ray photoelectron spectroscopy analysis indicates a reduction of In-and Ga-related signals. Furthermore, small drain current hysteresis and low-interface state density (D-it) value confirm a high interfacial quality for the high-k/III-V structure. Overall, the PEALD passivation for HfO2/In0.53Ga0.47As interface shows a remarkable improvement on the MOSFET performance.
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
(2014-08-01)
Quang Ho Luc
;
Chang, Edward Yi
;
Hai Dang Trinh
;
Lin, Yueh Chin
;
Hong Quan Nguyen
The effects of plasma enhanced atomic layer deposition (PEALD)-AlN interfacial passivation layer (IPL) on the Al2O3/In0.53Ga0.47As interfaces qualities are studied with different plasma powers. The improvement in electrical properties, including capacitance-voltage (C-V) hysteresis, frequency dispersion, and interface state densities (D-it) are demonstrated on the Al2O3/n, p-In0.53Ga0.47As MOS capacitors. The excellent C-V behaviors are observed on both type of In0.53Ga0.47As-based MOS devices by performing a thin AlN-IPL at the plasma power of 150 W. To explore the interaction between PEALD-AlN layer and In0.53Ga0.47As surface, X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy analyses have also been characterized.
Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition
(2018-05-01)
Minh Thien Huu Ha
;
Sa Hoang Huynh
;
Huy Binh Do
;
Tuan Anh Nguyen
;
Quang Ho Luc
A GaSb epilayer is grown on a GaAs/Si(001) epitaxial substrate via metalorganic chemical vapor deposition. High-resolution transmission electron microscopy micrographs and high-resolution X-ray reciprocal space mapping indicate an entirely relaxed interfacial misfit (IMF) array GaSb epilayer. The valence-band offset and conduction-band offset of the Al2O3/GaSb/GaAs/Si structure are estimated to be 2.39 and 3.65 eV, respectively. The fabricated Al2O3/p-GaSb/GaAs/Si MOS capacitors exhibited good capacitance-voltage characteristics with a small accumulation frequency dispersion of approximately 1.05% per decade. These results imply that the GaSb epilayer grown on the GaAs/Si platform in the IMF mode can be used for future complementary metal-oxide semiconductor applications. (C) 2018 The Japan Society of Applied Physics
Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
(2015-12-01)
Huy Binh Do
;
Quang Ho Luc
;
Minh Thien Huu Ha
;
Hu, Chenming Calvin
;
Lin, Yueh Chin
AlN has successfully been applied to passivate the oxide/III-V interface; however, it changes both the metal work function (WF) and band alignment of the gate-stack and, thus, affects the power consumption of the devices. We found that the AlN layer induces a dipole delta = 0.18 eV between HfO2 and substrate. The dipole value obtained from capacitance-voltage characteristics performs good agreement with the results of X-ray photoelectron spectroscopic measurements. The effective WF of Ni is found to be 5.55 eV, which is larger than its WF in vacuum. The valance band offset and the conduction band offset of HfO2 with AlN/In0.53Ga0.47As are found to be 2.82 and 2.06 eV, respectively.
Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
(2016-09-05)
Huynh, Sa Hoang
;
Minh Thien Huu Ha
;
Huy Binh Do
;
Quang Ho Luc
;
Yu, Hung Wei
Highly lattice-mismatch (over 8%) ternary InxGa1-xSb alloy directly grown on GaAs substrates was demonstrated by metalorganic chemical vapor deposition (MOCVD). The influence of growth parameters, such as growth temperature, indium vapor composition, and V/III ratio, on the film properties was investigated, and it was found that the growth temperature has the strongest effect on the surface morphology and the crystal quality of the InxGa1-xSb epilayer. An optimized growth temperature of similar to 590 degrees C and a V/III ratio of 2.5 were used for the growth of the InxGa1-xSb epilayer on GaAs that displays a lower surface roughness. High-resolution transmission electron microscopy micrographs exhibit that InxGa1-xSb epilayer growth on GaAs was governed by the interfacial misfit dislocation growth mode. Furthermore, the variation of the intermixing layer thickness at the InxGa1-xSb/GaAs heterointerface was observed. These results provide an information of growing highly lattice-mismatched epitaxial material systems by MOCVD growth process. Published by AIP Publishing.
In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
(2018-03-01)
Luc, Quang Ho
;
Yang, Kun Sheng
;
Lin, Jia Wei
;
Chang, Chia Chi
;
Huy Binh Do
This letter presents a remote NH3/N-2 plasma treatment after gate oxide deposition for improving the electrical characteristics and the reliability of In0.53Ga0.47As FinFET. The plasma treatment enhanced drive current (I-DS), transconductance (G(m)), subthreshold swing (SS), flicker noise, and positive bias temperature lifetime, suggesting that this plasma treatment significantly improves the quality of the etched In0.53Ga0.47As channel interface. In0.53Ga0.47As FinFETs and gate-all-around FETs were fabricated with the proposed in situ remote-plasma treatment and characterized.
Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application
(2017-05-01)
Huy Binh Do
;
Quang Ho Luc
;
Minh Thien Huu Ha
;
Sa Hoang Huynh
;
Tuan Anh Nguyen
Use of the Mo/Ti/AlN/HfO2 metal/dielectric stack to increase the permittivity of HfO2 for low power consumption InGaAs-based MOSFET is investigated in this letter. The dielectric constant of HfO2 was found to increase by 47%, from 17 to 25, after Ti doping without affecting the interface trap density around the mid-gap of the MOSCAPs. A strong inversion behavior with low leakage current for the MOSCAP was also observed. The gate voltage needed to tune the Fermi level of InGaAs channel was found to be smaller for the Ti-doped HfO2 sample as compared with the sample with un-doped HfO2. The increase of the dielectric constant of HfO2 after Ti doping combined with the use of Ti gate metal, which has the work function level near the conduction band edge of InGaAs, makes the proposed Mo/Ti/HfO2 (Ti) stackideal for future lowpower consumption InGaAs-based NMOS applications.
Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition
(2017-01-09)
Sa Hoang Huynh
;
Minh Thien Huu Ha
;
Huy Binh Do
;
Tuan Anh Nguyen
;
Quang Ho Luc
The ternary InxGa1-xSb epilayers grown on GaAs substrates by metalorganic chemical vapor deposition using a GaSb buffer layer have been demonstrated. High-resolution transmission electron microscopy micrographs illustrate an entirely relaxed GaSb buffer grown by the interfacial misfit dislocation growth mode. A high quality In0.15Ga0.85Sb epilayer was obtained on the GaSb surface with the very low threading dislocation densities (similar to 8.0 x 10(6) cm(-2)) and the surface roughness was 0.87 nm. The indium content of the InxGa1-xSb epilayer depends significantly on the growth temperature and approaches to a saturated value of 15% when the growth temperature was above 580 degrees C. Based on the X-ray photoelectron spectroscopy analyses, the valence band offset and the conduction band offset of Al2O3 with the In0.15Ga0.85Sb/GaSb/GaAs heterostructure are 3.26 eV and 2.91 eV, respectively. In addition, from the O1s energy-loss spectrum analysis, the band gap of Al2O3 is found to be similar to 6.78+/-0.05 eV. Published by AIP Publishing.
Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials
(2016-09)
Huy Binh Do
;
Quang Ho Luc
;
Minh Thien Huu Ha
;
Sa Hoang Huynh
;
Hu, Chenming
Accurate determination of the flat band voltage (V-FB) is very important for extracting the effective work function of metal, and it will affect the prediction of the threshold voltage of the metal-oxide-semiconductor (MOS) devices. A modified method to accurately determine V-FB of the In0.53Ga0.47As n-type MOS device is presented. The effects of capacitance voltage hysteresis and interface trap density at the oxide/semiconductor interface on the accuracy of the extracted V-FB values are discussed. The results are also applicable to other MOS devices with high mobility channel materials.
Nonlinear dependence of X-ray diffraction peak broadening in InxGa1-xSb epitaxial layers on GaAs substrates
(2018-04-01)
Sa Hoang Huynh
;
Minh Thien Huu Ha
;
Huy Binh Do
;
Tuan Anh Nguyen
;
Quang Ho Luc
The configuration of the interfacial misfit array at InxGa1-xSb/GaAs interfaces with different indium compositions and thicknesses grown by metalorganic chemical vapor deposition was systematically analyzed using X-ray diffraction (XRD) reciprocal space maps (RSMs). These analyses confirmed that the epilayer relaxation was mainly contributed to by the high degree of spatial correlation of the 90 degrees misfit array (correlation factors <0.01). The anisotropic peak-broadening aspect ratio was found to have a non-linear composition dependence as well as be thickness-dependent, related to the strain relaxation of the epilayer. However, the peak-broadening behavior in each RSM scan direction had different composition and thickness dependences. (c) 2018 The Japan Society of Applied Physics