Browsing by Author "Hwang, Jennchang"

Now showing 1 - 3 of 3

Effects of Ar/N-2 flow ratio on sputtered-AlN film and its application to low-voltage organic thin-film transistors
(2006-10-01)
Zan, Hsiao-Wen
;
Yen, Kuo-Hsi
;
Liu, Pu-Kuan
;
Ku, Kuo-Hsin
;
Chen, Chien-Hsun
In this work, we applied a low-temperature (150 degrees) alumina nitride (AIN) film as the gate dielectric in organic thin-film transistors (OTFTs). It was found that the Poole-Frenkel-type leakage can be suppressed by increasing the nitrogen gas ratio in the deposition process. The thin and low-leakage AIN dielectric was characterized and then utilized in pentacene-based OTFTs. The proposed AIN dielectric greatly lowers the OTFT operating voltage (< 5 V). A low threshold voltage (-1.5 V), a low subthreshold swing (104 mV/decade), and a high on/off current ratio (> 10(5)) were also obtained for the AIN-OTFTs.
Low-voltage organic thin film transistors with hydrophobic aluminum nitride film as gate insulator
(2007-08-01)
Zan, Hsiao-Wen
;
Yen, Kuo-Hsi
;
Liu, Pu-Kuan
;
Ku, Kuo-Hsin
;
Chen, Chien-Hsun
This paper reports on the low-voltage (< 5 V) pentacene-based organic thin film transistors (OTFTs) with a hydrophobic aluminum nitride (AlN) gate-dielectric. In this work, a thin (about 50 nm), smooth (roughness about 0.18 nm) and low-leakage AlN gate dielectric is obtained and characterized. The AlN film is hydrophobic and the surface free energy is similar to the organic or the polymer films. The demonstrated AlN-OTFTs were operated at a low-voltage (3-5 V). A low-threshold voltage (-2V) and an extremely low-subthreshold swing (similar to 170 mV/dec) were also obtained. Under low-voltage operating conditions, the on/off current ratio exceeded 106, and the field effect mobility was mobility was 1.67 cm(2)/V s.(c) 2006 Elsevier B.V. All rights reserved.
Organic thin-film transistors with AIN film as a gate-insulator by RFIICP sputtering
(2005-01-01)
Yen, Kuo-Hsi
;
Zan, Hsiao-Wen
;
Ko, Chueh-Ping
;
Liu, Pu-Kuan
;
Chang, Tzu-Yueh
We firstly fabricated the organic thin-film transistors with sputtered-AlN film as the gate insulator. The AlN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5x10(-4) cm(2)/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.