Browsing by Author "Hwang, M."

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High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C
(2008-08-01)
Cheng, C. H.
;
Lin, S. H.
;
Jhou, K. Y.
;
Chen, W. J.
;
Chou, C. P.
We report Ir/TiO(2)/TaN metal-insulator-metal capacitors processed at only 300 degrees C, which show a capacitance density of 28 fF/mu m(2) and a leakage current of 3 x 10(-8) (25 degrees C) or 6 x 10(-7) (125 degrees C) A/cm(2) at -1 V. This performance is due to the combined effects of 300 degrees C nanocrystallized high-kappa, TiO(2), a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.
Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode
(2008-10-01)
Cheng, C. H.
;
Pan, H. C.
;
Huang, C. C.
;
Chou, C. P.
;
Hsiao, C. N.
We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 x 10(-6) A/cm(2) (at -1 V) at a 28 fF/mu m(2) capacitance density.