Browsing by Author "Islamov, D. R."

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Bipolar conductivity in amorphous HfO(2)
(2011-08-15)
Islamov, D. R.
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Gritsenko, V. A.
;
Cheng, C. H.
;
Chin, A.
;
交大名義發表
This study calculates the contribution of electrons and holes to HfO(2) conductivity in Si/HfO(2)/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO(2), allowing HfO(2) to exhibit two-band conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626599]
Bipolar conductivity in amorphous HfO2
(2011-08-15)
Islamov, D. R.
;
Gritsenko, V. A.
;
Cheng, C. H.
;
Chin, A.
;
交大名義發表
This study calculates the contribution of electrons and holes to HfO2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626599]
Bipolar conductivity in nanocrystallized TiO2
(1970-01-01)
Islamov, D. R.
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Gritsenko, V. A.
;
Cheng, C. H.
;
Chin, A.
;
交大名義發表
"This study calculated the contribution of electrons and holes to TiO2 conductivity in Si/TiO2/Ni structures by conducting experiments on the injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of TiO2, enabling two-band conductivity. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737016]"
Charge transport in amorphous Hf0.5Zr0.5O2
(2015-03-09)
Islamov, D. R.
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Perevalov, T. V.
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Gritsenko, V. A.
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Cheng, C. H.
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Chin, A.
In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf0.5Zr0.5O2 is phonon-assisted tunneling between traps like in HfO2 and ZrO2. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf0.5Zr0.5O2 were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 was discussed. (C) 2015 AIP Publishing LLC.
Evolution of the conductivity type in germania by varying the stoichiometry
(2013-12-02)
Islamov, D. R.
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Gritsenko, V. A.
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Cheng, C. H.
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Chin, A.
;
交大名義發表
Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity. (C) 2013 AIP Publishing LLC.
Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM
(2015-11-01)
Kruchinin, V. N.
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Aliev, V. Sh.
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PerevaIov, T. V.
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Islamov, D. R.
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Gritsenko, V. A.
We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (similar to 10-15%) of hafnium sub-oxides HfOy (y < 2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed. (C) 2015 Elsevier B.V. All rights reserved.
Origin of traps and charge transport mechanism in hafnia
(2014-12-01)
Islamov, D. R.
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Gritsenko, V. A.
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Cheng, C. H.
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Chin, A.
;
交大名義發表
In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25 eV in HfO2 was determined based on the charge transport experiments. (C) 2014 AIP Publishing LLC.
Percolation conductivity in hafnium sub-oxides
(2014-12-29)
Islamov, D. R.
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Gritsenko, V. A.
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Cheng, C. H.
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Chin, A.
;
交大名義發表
In this study, we demonstrated experimentally that formation of chains and islands of oxygen vacancies in hafnium sub-oxides (HfOx, x < 2) leads to percolation charge transport in such dielectrics. Basing on the model of Efros-Shklovskii percolation theory, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. Based on the percolation theory suggested model shows that hafnium sub-oxides consist of mixtures of metallic Hf nanoscale clusters of 1-2 nm distributed onto non-stoichiometric HfOx. It was shown that reported approach might describe low resistance state current-voltage characteristics of resistive memory elements based on HfOx. (C) 2014 AIP Publishing LLC.