Browsing by Author "JUANG, FY"

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CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
(1993-06-01)
CHEN, HD
;
CHANG, CY
;
LIN, KC
;
CHAN, SH
;
FENG, MS
Heavily carbon-doped GaAs (1 X 10(18) approximately 1 X 10(20) cm-3) grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon-tetrachloride (CCl4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CC]4 flow rates. Dopant concentration first increased from 550-degrees-C and reached a maximum at 570-degrees-C growth temperature (T(g)) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at T(g) = 590-degrees-C or less than 40 at T(g) = 630-degrees-C. Hole concentration increased and then decreased as CCl4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate Of CCl4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2-degrees off toward [110] misoriented substrate. Carbon-doped GaAs films had higher Hall mobility than zinc-doped GaAs films at high doping levels due to less self-compensation. The highest dopant concentration in this system was 2.3 X 10(20) cm-3 at T(g) = 580-degrees-C and V/III = 10.
FUNDAMENTAL MODE-OPERATION OF HIGH-POWER INGAAS/GAAS/ALGAAS LASER ARRAYS
(1993-05-01)
TSANG, JS
;
LIOU, DC
;
TSAI, KL
;
CHEN, HR
;
TSAI, CM
A new ridge waveguide laser array with stable fundamental mode operation has been fabricated. By introducing absorption regions in all the laser stripes except for the central one, the electric field distribution of the laser arrays and the modal gains of the array supermodes are changed, resulting in fundamental mode operation. The threshold current of an array with five elements is typically 40 mA and the maximum output power is higher than 150 mW. The single-lobed far-field pattern centered at 0-degrees with full width at half maximum of 2-degrees is obtained at 1.5 times of the threshold current (I(th)).