Browsing by Author "JUANG, KC"

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THE PROCESSING WINDOWS FOR SELECTIVE COPPER CHEMICAL-VAPOR-DEPOSITION FROM CU(HEXAFLUOROACETYLACETONATE)TRIMETHYLVINYLSILANE
(1995-01-01)
CHIOU, JC
;
JUANG, KC
;
CHEN, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
To identify the processing tolerance for the selective Cu chemical vapor deposition (Cu CVD) the processing windows were constructed with respect to deposition pressure and substrate temperature over thermally grown SiO2 vs. various conducting substrates of W, CoSi2, TiN, TiW, and Al. It is found that the width of selective deposition window decreases as the deposition pressure is increased, and no selective Cu deposition can be obtained as the deposition pressure exceeds 120 mTorr. The lowest temperatures for Cu CVD on various SiO2 substrates including thermally grown, BPSG, TEOS, and PECVD SiO2 were determined so that processing windows for selective Cu deposition on Variously patterned wafers can be constructed. The selective Cu deposition was also conducted on patterned substrates with submicrometer feature sizes using the PECVD SiO, as the interlayer dielectric. The nucleation of Cu on the SiO2 surface obviously acts as the major limitation for achieving selective Cu CVD. We postulate that the Cu containing adspecies, Cu(hfac), on the insulating SiO2 surface may combine by surface diffusion, and these assembled adspecies then disproportionate by exchanging electrons with each other rather than transferring electrons through the substrate.
TIW(N) AS DIFFUSION-BARRIERS BETWEEN CU AND SI
(1995-07-01)
CHIOU, JC
;
JUANG, KC
;
CHEN, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
TiW(N) and aw are employed as diffusion barriers in the Cu/barrier/Si system. The thermal stability of Cu/TiW(N) and Cu/TiW contacted p(+)n junction diodes was investigated with respect to metallurgical reaction and electrical characteristics. The as-deposited TiW film formed body-centered cubic (bcc) structure, while the TiW(N) film formed face-centered cubic (fcc) structure. The Cu/TiW(600 Angstrom)/Si structure remains intact up to 750 degrees C 30 s rapid thermal anneal (RTA) in N-2 ambient; at 775 degrees C the Cu diffuses through the TiW layer to form Cu,Si with an overlayer of Ti-W-Si on the surface. The Cu/TiW(N)(600 Angstrom)/Si system is metallurgically stable up to 1000 degrees C 30 s RTA in N-2 ambient. The Cu/TiW(600 Angstrom)/p(+)n junction diodes were able to withstand the RTA annealing up to 675 degrees C without losing the device integrity; however, the devices' characteristics are completely destroy at temperatures above 775 degrees C inconsistent with the occurrence of dramatic metallurgical reaction. The Cu/TiW(N)(600 Angstrom)/p(+)n junction diodes were able to withstand the RTA treatment up to 650 degrees C without electrical characteristic degradation; and the devices' characteristics degrade gradually with the increase of RTA temperature.