Browsing by Author "Jen, Shien-Uang"

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Ferromagnetic resonance properties of Fe81-xNixGa19/Si(1 0 0) and Fe81-yNiyGa19/glass films
(2013-06-15)
Liu, Chi-Ching
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Jen, Shien-Uang
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Juang, Jenh-Yih
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Lo, Chi-Kuen
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電子物理學系
Two series of Fe81 xNixGa19/Si(100) and Fe81 yNiyGa19/glass films, where x or y = 0-26, were made by the magnetron sputtering method. The film thickness (t(f)) was fixed at 100 nm. We have performed three kinds of experiments on these films: (i) the saturation magnetostriction (lambda(S)) measurement; (ii) the easy-axis and hard-axis magnetic hysteresis loop measurements; and (iii) the ferromagnetic resonance (FMR) experiment to find the resonance field (H-R) with an X-band cavity tuned at f(R) = 9.6 GHz. The natural resonance frequency, f(FMR), of the Kittel mode at zero external field (H = 0) is defined as f(FMR) (sic) nu[H(K)4-pi M-S](1/2), where gamma = 2 pi nu is the gyromagnetic ratio, H-K and 4 pi M-S are the uniaxial anisotropy field and saturation magnetization, and H-K << 4 pi M-S. The Gilbert damping constant, alpha, is calculated from the formula, alpha = [nu(Delta H)(S)]/(2f(R)), where (Delta H)(exp) = (Delta H)(S) + (Delta H)(A), (Delta H)(exp) is the half-width of the absorption peak around the resonance field H-R, (Delta H)(S) is the symmetric part of (Delta H)(exp), and (Delta H)(A) is the asymmetric part. The degree of asymmetry, (Delta H)(A)/(Delta H)(exp), is associated with the structural and/or magnetic inhomogeneities in the film. The main findings of this study are as follows: (A) f(FMR) tends to decrease, as x or y increases; (B) alpha decreases from 0.052 to 0.020 and then increases from 0.020 to 0.050, as x increases, and a decreases from 0.060 to 0.013 in general, as y increases; and (C) lambda(S) reaches a local maximum when x = 22. We conclude that the Fe59Ni22Ga19/glass film should be the most suitable for application in magneto-electric microwave devices. (C) 2013 Elsevier B.V. All rights reserved.
Flexible Heteroepitaxy of CoFe2O4/Muscovite Bimorph with Large Magnetostriction
(2017-03-01)
Liu, Heng-Jui
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Wang, Chih-Kuo
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Su, Dong
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Amrillah, Tahta
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Hsieh, Ying-Hui
A bimorph composed of ferrimagnetic cobalt ferrite (CoFe2O4, CFO) and flexible muscovite was fabricated via van der Waals epitaxy. The combination of X-ray diffraction and transmission electron microscopy was conducted to reveal the heteroepitaxy of the CFO/muscovite system. The robust magnetic behaviors against mechanical bending were characterized by hysteresis measurements and magnetic force microscopy, which maintain a saturation magnetization (M-s) of similar to 120-150 emu/cm(3) under different bending states. The large magnetostrictive response of the CFO film was then determined by digital holographic microscopy, where the difference of magnetostrction coefficient (Delta lambda) is -104 ppm. The superior performance of this bimorph is attributed to the nature of weak interaction between film and substrate. Such a flexible CFO/muscovite bimorph provides a new platform to develop next-generation flexible magnetic devices.
Flexible Multiferroic Bulk Heterojunction with Giant Magnetoelectric Coupling via van der Waals Epitaxy
(2017-06-01)
Amrillah, Tahta
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Bitla, Yugandhar
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Shin, Kwangwoo
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Yang, Tiannan
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Hsieh, Ying-Hui
Magnetoelectric nanocomposites have been a topic of intense research due to their profound potential in the applications of electronic devices based on spintronic technology. Nevertheless, in spite of significant progress made in the growth of high-quality nanocomposite thin films, the substrate damping effect still remains a major hurdle in realizing the ultimate magneto electric coupling. To overcome this obstacle, an alternative strategy of fabricating a self-assembled ferroelectric-ferrimagnetic bulk heterojunction on a flexible muscovite via van der Waals epitaxy is adopted. hi this study, we investigated the magnetoelectric coupling in a self-assembled BiFeO3 (BFO)-CoFe2O4 (CFO) bulk heterojunction epitaxially grown on a flexible muscovite substrate. The obtained heterojunction is composed of vertically aligned multiferroic BFO nanopillars embedded in a ferrimagnetic CFO matrix. Moreover, due to the weak interaction between the flexible substrate and bulk heterojunction, the interface is incoherent and, hence, the substrate damping effect is greatly reduced. The phase-field simulation model also complements our results. The magnetic and electrical characterizations highlight the improvement in magnetoelectric coupling of the BFO-CFO bulk heterojunction. A magnetoelectric coupling coefficient of 74 mV/cm.Oe of this bulk heterojunction is larger than the magnetoelectric coefficient reported earlier on flexible substrates. Therefore, this study delivers a viable route of fabricating a remarkable magnetoelectric heterojunction and yet flexible electronic devices that are robust against extreme conditions with optimized performance.
Magnetic domain studies of La0.7Sr0.3MnO3 film deposited on SrLaAlO3 (001) substrate
(2013-06-26)
Liu, Chi-Ching
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Chu, Pei-Yuan
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Chiang, Yao-Wei
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Juang, Jenh-Yih
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Jen, Shien-Uang
Epitaxial 120 nm La0.7Sr0.3MnO3 (LSMO) compressively strained thin films were deposited on single-crystalline SrLaAlO3(0 0 1) (SLAO) substrates by the pulsed laser deposition (PLD) method. From the x-ray diffraction study, we confirmed that the c-axis of the LSMO crystal pointed out of the film plane. Two kinds of magnetic experiments were performed on the film: (i) the in-plane (field H (sic) H-P) and the out-of-plane (field H (sic) H-N) magnetic hysteresis loop measurements and (ii) magnetic force microscopy scans. We have proved from both theory and experiment that the LSMO film should exhibit the weak and tilted perpendicular magnetic anisotropy at room temperature (RT), that is, the easy axis (EA) is tilted relative to the film normal by an angle theta(o) is approxiamtely equals to 37 degrees, when the film is in the demagnetized state. The magnetic domain (MD) structure of the demagnetized LSMO film showed a maze-like pattern. Although from the in-plane hysteresis loop, H-P = 600 Oe seems large enough to saturate the film, the corresponding MD structure was not in a single-domain state. Instead, there were two types of MDs: the canted MD and the saturated MD. The MD patterns of the LSMO film between the demagnetized and the remanent states were different. In addition, there were double-switch phenomena in the out-of-plane hysteresis loop. When vertical bar H-N vertical bar congruent to 140 Oe, a transition of the MD pattern from the maze-like to the closure (or dense-stripe) type occurred.
The effects of annealing temperature and sputtering power on the structure and magnetic properties of the Co-Fe-Zr-B thin films
(2012-11-01)
Chen, Guo-Ju
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Jian, Sheng-Rui
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Jang, Jason Shian-Ching
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Shih, Yung-Hui
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Chen, Yuan-Tsung
The microstructure and magnetic properties of the amorphous Co-Fe-Zr-B thin films grown on glass substrates by dc magnetron sputtering are investigated using differential scanning calorimetry (DSC), transmission electron microscopy (TEM), and superconducting quantum interference device (SQUID) techniques. The Co-Fe-Zr-B thin films deposited at room temperature were annealed at temperatures ranged from 683 K to 773 K. Experimental results indicated that the coercivity (H-c) of the Co-Fe-Zr-B thin films is significantly influenced by residual stress and crystalline phases within the films. The correlation of the coercivity and the microstructure of Co-Fe-Zr-B thin films are discussed. After annealed at 683 K, the coercivity of the Co-Fe-Zr-B film was as low as 1.2 Oe. (C) 2012 Elsevier Ltd. All rights reserved.