Browsing by Author "Jen-Chung, Lou"
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Item type:Item, Method for fabrication of polycrystallin silicon thin film transistors(2004-12-02) ;Ching-Fa, Yeh ;Tien-Fu, ChenJen-Chung, LouThe present invention provides a method for fabrication of polycrystalline silicon thin film transistors, which comprises polysilicon spacer capping onto the sidewall of the active layer in thin film transistors by an isotropic dry etching for silicon film. This method can suppress the shrinkage of the active layer during recrystallization by laser. Large grains can be formed in the channel after recrystallization of high-energy continuous wavelength laser or recrystallization of excimer laser annealing on active layer. This process does not require any additional mask. Uniform arrangement of grain boundaries and large grain sizes can promote device performance uniformity. This technique will play an important role in the fields of low temperature polycrystalline silicon thin film transistors (LTPS-TFTs).Item type:Item, Method for fabrication of polycrystalline silicon thin film transistors(2004-12-30) ;Ching-Fa, Yeh ;Tien-Fu, ChenJen-Chung, LouThe present invention provides a method for fabrication of polycrystalline silicon thin film transistors, which forms a silicon spacer on the sidewall of the active layer of a thin film transistor (TFT) by way of anisotropic plasma etching in a single direction. The silicon spacer provides a mechanism for laser recrystallization on the sidewall to prevent the active layer from shrinkage or shelling-off after the laser recrystallization. According to the present invention, large grains can be formed in the channel without additional mask during production. By doing so, the characteristics of the components are enhanced; the uniformity is improved; and, the production cost is lowered. Therefore, this technique will play an important role in the fields of low temperature polycrystalline silicon thin film transistor (LTPS-TFT).