Browsing by Author "Jhan, Huang-Yan"

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Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector
(2009-06-15)
Shieh, Jia-Min
;
Yu, Wen-Chien
;
Huang, Jung Y.
;
Wang, Chao-Kei
;
Dai, Bau-Tong
A fully silicon-based metal-oxide-semiconductor field-effect transistor is demonstrated for the detection of near-infrared light. Si nanocrystals (nc-Si) are synthesized in the nanopore channels of mesoporous silica (MS) inserted between two oxide layers to form a complete gate structure of polycrystalline Si/SiO(2)/nc-Si-in-MS/SiO(2) with a polycrystalline Si electrode. Illuminating the gate with near-infrared light, a photoresponsivity as high as 2.8 A/W at 1.55 mu m can be achieved. The improved photoresponsivity is attributed to from optical transitions via interface states and a current amplification mechanism of the device.
Novel 140 degrees C Hybrid Thin Film Solar Cell/Transistor Technology with 9.6% Conversion Efficiency and 1.1 cm2/V-s Electron Mobility for Low-Temperature Substrates
(2010)
Shen, Chang-Hong
;
Shieh, Jia-Min
;
Kuo, Hao-Chung
;
Huang, Jung Y.
;
Huang, Wen-Hsien
For the first time, we report a low temperature silicon thin film deposition technology using high density plasma for high performance and low cost solar cells with embedded transistor modules. For process temperature at 140 degrees C, energy conversion efficiency of 9.6% and electron mobility of 1.1 cm(2)/V-s have been achieved. Device performance with process temperature down to 90 degrees C and 60 degrees C has also been examined in depth. This very low process temperature technology can integrate energy harvesting with electronics on inexpensive and flexible substrates.