Browsing by Author "Jhan, Yi-Ruei"

Now showing 1 - 2 of 2

Characteristic of p-Type Junctionless Gate-All-Around Nanowire Transistor and Sensitivity Analysis
(2013-02-01)
Han, Ming-Hung
;
Chang, Chun-Yen
;
Jhan, Yi-Ruei
;
Wu, Jia-Jiun
;
Chen, Hung-Bin
The characteristics and sensitivities of p-type junctionless (JL) gate-all-around (GAA) (JLGAA) nanowire transistors are demonstrated by simulating a 3-D quantum transport device with a view to their use in CMOS technology. The concentration of dopants in a p-type JL nanowire transistor is not as high as that in an n-type device owing to solid solubility of boron in silicon. However, we can use a midgap material as gate electrode to design an appropriate device threshold voltage. The p-type JLGAA transistor exhibits a favorable on/off current ratio and better short-channel characteristics than a conventional inversion-mode transistor with a GAA structure. Sensitivity analyses reveal that the channel thickness and random dopant fluctuation substantially affect the device performance in terms of threshold voltage (V-th), on current (I-on), and subthreshold slope because of the full depletion condition of the channel. The channel length and oxide thickness have less impact because the short-channel effect is well controlled.
Fabrication, characterization and simulation of Omega-gate twin poly-Si FinFET nonvolatile memory
(2013-07-22)
Yeh, Mu-Shih
;
Wu, Yung-Chun
;
Hung, Min-Feng
;
Liu, Kuan-Cheng
;
Jhan, Yi-Ruei
This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Omega-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its Omega-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.5 V after 10(4) program and erase cycles, and after 10 years, the charge is 47.7% of its initial value. This investigation explores its feasibility in the future active matrix liquid crystal display system-on-panel and three-dimensional stacked flash memory applications.