Browsing by Author "Jhong, Jhin-Ci"

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4-GHz inter-stage-matched SiGe HBT LNA with gain enhancement and no noise figure degradation
(2007-02-01)
Meng, Chinchun
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Jhong, Jhin-Ci
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電信工程研究所
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Institute of Communications Engineering
An effective way to boost power gain without noise figure degradation in a cascode low noise amplifier (LNA) is demonstrated at 4 GHz using 0.35 mu m SiGe HBT technology. This approach maintains the same current consumption because a low-pass pi-type LC matching network is inserted in the inter-stage of a conventional cascode LNA. 5 dB gain enhancement with no noise figure degradation at 4 GHz is observed in the SiGe HBT LNA with inter-stage matching.
Characteristics of GaAs transformers for RFIC applications
(2008-11-01)
Meng, Chinchun
;
Teng, Ya-Hui
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Syu, Jin-Siang
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Lin, Yi-Chen
;
Jhong, Jhin-Ci
In this article, stacked transformers, coupling stacked transformers, interleave transformers, and symmetrical transformers on GaAs substrate are systematically studied. Two kinds of stacked transformer are under study. One has the symmetrical electric property while the other one has a better quality factor for the primary port. The stack transformers have achieved the highest coupling coefficient (similar to 0.9) at the cost of lower self-resonance frequency. The interleave transformers have the identical electrical properties for the primary and the secondary ports. However, the layout is incompatible with the differential operation. Oil the other hand, the symmetrical transformer is compatible with the differential operation (aid call have the center-tapped biasing option. The data established here provides a useful design library for the GaAs RFIC. (C) 2008 Wiley Periodicals, Inc.
Characteristics of Integrated RF Transformers on GaAs Substrate
(2007)
Meng, Chinchun
;
Teng, Ya-Hui
;
Lin, Yi-Chen
;
Jhong, Jhin-Ci
;
Yen, Ying-Chieh
Stacked transformers, coupling stacked transformers, interleave transformers and symmetrical transformers on GaAs substrate are systematically studied in this paper. Two kinds stacked transformer are under study. One has the symmetrical electric property while the other one has a better quality factor for the primary port. The stack transformers have achieved the highest coupling coefficient (similar to 0.9) at the cost of lower self-resonance frequency. The interleave transformers have the identical electric properties for the primary and the secondary ports. However, the layout is incompatible with the differential operation. On the other hand, the symmetrical transformer is compatible with the differential operation and can have the center-tapped biasing option. The data established here provide a useful design library for the GaAs RFIC.