Browsing by Author "Jian, Min-Feng"
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Item type:Item, A simple method for sub-100 nm pattern generation with I-line double-patterning technique(2010-05-01) ;Tsai, Tzu-I ;Lin, Horng-Chih ;Jian, Min-Feng ;Huang, Tiao-YuanChao, Tien-ShengWe have developed a simple method adopting double-patterning technique to extend the I-line stepper limit for the sub-100 nm poly-Si pattern generation in this work. Through in-line and cross-sectional scanned electron microscopic analyses of the generated patterns, we confirmed the feasibility of the double-patterning technique for the fabrication of nano-scale devices. Resolution capability of this technique has been confirmed to be at least 100 nm, which is much superior to the resolution limit of conventional I-line lithography. This approach has also been applied for fabricating p-channel metal-oxide-semiconductor field-effect transistors. Excellent device characteristics were verified. (C) 2010 Elsevier Ltd. All rights reserved.Item type:Item, Fabrication of sub-100-nm metal-oxide-semiconductor field-effect transistors with asymmetrical source/drain using I-line double patterning technique(2011-03-01) ;Lin, Horng-Chih ;Tsai, Tzu-I ;Chao, Tien-Sheng ;Jian, Min-FengHuang, Tiao-YuanThe authors present a simple double patterning technique with I-line stepper to define nanoscale structures and have successfully fabricated n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-100-nm gate length. With this approach, polycrystalline silicon (poly-Si) gate with linewidth down to 80 nm could be formed with good control, which far exceeds the resolution limit of conventional I-line lithography. Moreover, ineffectiveness of end point detection in the second poly-Si gate definition is also addressed. For reliable process control in the second etching step, appropriate mask design is found to be essential. Finally, sub-100-nm MOSFETs with or without halo implemented symmetrically or asymmetrically are fabricated and characterized. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3551527]