Browsing by Author "Jiang, C. M."

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Correlation between SET-State Current Level and Read Disturb Failure Time in a Resistive Switching Memory
(2018-01-01)
Su, P. C.
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Jiang, C. M.
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Wang, C. W.
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Wang, Tahui
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電子工程學系及電子研究所
The relationship between SET-state current level and read-disturb failure time in a tungsten oxide RRAM is characterized and modeled. Our result shows that read voltage induced reduction of oxygen vacancy density in tungsten oxide follows a power law dependence on cumulative read-disturb time. The power factor is independent of SET-state current level. Read disturb failure time is considerably improved by several orders of magnitude as SET-state current level increases a few times. An analytical model to correlate SET-state current level and read disturb failure time is proposed. Since SET-state current level is related to a cross-section of a conductive filament in an oxide, our model is developed based on a relationship between oxide area and critical oxide trap (oxygen vacancy) density from an oxide breakdown model. The validity of the proposed model is supported by experiment results.
Investigation of Data Pattern Effects on Nitride Charge Lateral Migration in a Charge Trap Flash Memory by Using a Random Telegraph Signal Method
(2018-01-01)
Liu, Y. H.
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Lin, H. Y.
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Jiang, C. M.
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Wang, Tahui
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Tsai, W. J.
Data pattern effects on nitride charge lateral migration and V-t retention loss in a charge trap flash memory is investigated. We use channel hot electron program and band-to-band tunneling hot hole erase to inject different amounts of electrons and holes at the two sides of a channel in a SONOS cell. An interface oxide trap near an injected charge packet and its associated random telegraph signal (RTS) are used as an internal probe to detect a local channel potential change resulting from trapped charge lateral migration. Vt retention loss and RTS in various charge storage patterns are characterized and analyzed. At a similar built-in electric field, nitride trapped holes are found to be more mobile than trapped electrons in lateral migration.