Browsing by Author "Jiang, Chin-Jung"

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Effect of gate metal on polymer transistor with glass substrate
(2006-12-11)
Meng, Hsin-Fei
;
Liu, Chien-Cheng
;
Jiang, Chin-Jung
;
Yeh, Yu-Lin
;
Horng, Sheng-Fu
Poly(3-hexylthiophene) (P3HT) field-effect transistors (FETs) are fabricated on glass substrates with SiO2 as a gate dielectric over the gate. Indium tin oxide (ITO), Al, and Cr are employed as gate metals. For spin-coated FET, the mobility increases from 10(-4)-10(-5) cm(2)/V s for ITO and Al gates to 10(-2) cm(2)/V s for Cr gate. After O-2 plasma treatment, the SiO2 roughness can be made as low as 0.7 nm. The mobility is further improved up to 0.3 cm(2)/V s by dip-coating P3HT. "Crossed rods" such as morphology can be observed in dip-coated FET with high mobility, indicating high degree of self-assembly facilitated by the flat SiO2 surface over Cr gate. (c) 2006 American Institute of Physics.