Browsing by Author "Jiang, Fa-Shen"

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Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure
(2016-10)
Tsai, Tsung-Ling
;
Jiang, Fa-Shen
;
Ho, Chia-Hua
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
In this letter, we propose a new method to improve resistive switching properties in ZrO2-based conductive-bridge resistive memory devices by introducing a thin AlN layer with high thermal conductivity between the ZrO2 layer and TiN bottom electrode. Compared with the Cu/TiW/ZrO2/TiN single-layer device, the Cu/TiW/ZrO2/AlN/TiN bilayer device exhibits lower operation voltages, higher endurance performance, and higher resistive switching uniformity. These substantial improvements in the resistive switching properties are attributed to the formation and rupture of conductive filament that can be effectively controlled in the device after inserting the AlN layer.
Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices
(2015-11-01)
Tsai, Tsung-Ling
;
Chang, Hsiang-Yu
;
Jiang, Fa-Shen
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
In this letter, we report the impact of post-oxide deposition annealing on the performance of HfO2-based resistive random access memory (RRAM) devices, namely, oxygen-ion-based oxide RRAM (OxRRAM) and Cu-ion-based conductive-bridge RAM (CBRAM) devices. Considerable degradation of the ON/OFF ratio and switching properties was observed in the OxRRAM devices after high-temperature annealing in vacuum, which is attributed to a considerable amount of oxygen vacancies created in the switching layer. However, the substantial improvement in device performance, such as stable switching, high switching cycles, decreased set/reset voltages, and near-100% device yield, were obtained in the CBRAM devices during the post-HfO2 deposition annealing in vacuum.