Browsing by Author "Jiang, Meshon"

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Design of Dual-Passband Microstrip Bandpass Filters With Multi-Spurious Suppression
(2010-04-01)
Jiang, Meshon
;
Chang, Li-Ming
;
Chin, Albert
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A systematic design method for microstrip bandpass filters with both dual-passband response and multi-spurious suppression is proposed in this letter. The filter is composed of stepped impedance resonators (SIRs). A novel asymmetric SIR structure is proposed to effectively increase the degree of freedom in the dual-passband bandwidth design. As a consequence, the transmission zero of the coupling stage could be used to suppress the unwanted higher order spurious responses. A complete design procedure considering both the synthesis of passband responses and the suppression of spurious responses is also depicted in detail. A fifth order filter is designed and fabricated to demonstrate this idea. The measured results show that the upper stopband can have an attenuation level near 30 dB up to more than 20 GHz (8.16 f(0)).
Design of Dual-Passband Microstrip Bandpass Filters With Suppression of Higher Order Spurious Response
(2009)
Jiang, Meshon
;
Chang, Li-Ming
;
Chin, Albert
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper proposes a systematic design method for dual-passband microstrip bandpass filters composed of stepped impedance resonators (SIRs) with suppression of higher order spurious responses. A specific dual-band fractional bandwidth design graph must be built. The line widths of the SIR and the gap size between SIRs provide two freedoms for determining the realizable fractional bandwidth of the two passbands. The inherent transmission zeros of coupled SIRs are used to suppress the unwanted spurious responses. A complete design procedure considering both the synthesis of passband responses and the suppression of spurious responses is detailed depicted in this paper. The idea is verified by a fabricated experimental filter. The measured frequency responses shows that the spurious response can be suppressed below -35.4 dB and the upper band can be extended to 5.62 f(0) (13.77GHz).
OPTIMIZATION AND MODELING FOR MOS VARACTORS IN 65 nm LOW-POWER MIXED-SIGNAL/RADIO-FREQUENCY TECHNOLOGY
(2009-09-01)
Chen, Chia Chung
;
Jiang, Meshon
;
Chang, Li Ming
;
Yeh, Tzu Jin
;
Liu, Feng Ming
CMOS technology scaling opens tip the possibility of designing variable capacitors based oil a metal oxide semiconductor (MOS) structure with improved tuning range and quality factor. In this work, the high Q-factor 24 and 21, wide timing ratio 45% and 36% can be achieved by 65 nm low power technology n+/n-well and p+/p-well MOS varactor up to 10 GHZ, respectively. Meanwhile, the equivalent circuit model, to model intrinsic and extrinsic parameters of MOS varactor, also have demonstrated that parasitic resistance is a main issue to dominate Q-factors, and the measured flicker noise result of MOS varactor is directly dependant on gate leakage current. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2119-2121. 2009; Published online in Wiley InterScience (www.intescience.wiley.com). DOI 10.1002/mop.24567