Browsing by Author "Jong, Y. C."

Now showing 1 - 3 of 3

Impact of self-heating effect on hot carrier degradation in high-voltage LDMOS
(2007)
Cheng, Chih-Chang
;
Lin, J. F.
;
Wang, Tahui
;
Hsieh, T. H.
;
Tzeng, J. T.
Self-heating induced transient hot carrier effects in high-voltage n-LDMOS are investigated. A novel LDMOS structure incorporating a metal contact in the bird's beak region is fabricated, which allows us to probe an internal voltage transient in hot carrier stress. The AC stress-frequency dependence of device degradation is characterized and evaluated by a two-dimensional numerical simulation. Our result shows that drain current degradation in AC stress is more serious than in DC stress because of the reduction. of self-heating effect.
Investigation of hot carrier degradation modes in LDMOS by using a novel three-region charge pumping technique
(2006)
Cheng, C. C.
;
Tu, K. C.
;
Wang, Tahui
;
Hsieh, T. H.
;
Tzeng, J. T.
Hot carrier stress induced oxide degradation in n-LDMOS is investigated by using a novel three-region charge pumping technique. This technique allows us to locate oxide damage area in various stress modes and gain insight into trap creation properties. Our characterization shows that a max. I(g) stress causes a largest drain current and subthreshold slope degradation because of both interface trap (N(it)) generation in the channel region and negative bulk oxide charge (Q(ox)) creation in the bird's beak region. The density of N(it) and Q(ox) can be separately extracted from the proposed charge pumping method. A numerical device simulation is performed to confirm our result.
Physics and characterization of various hot-carrier degradation modes in LDMOS by using a three-region charge-pumping technique
(2006-09-01)
Cheng, Chih-Chang
;
Lin, J. F.
;
Wang, Tahui
;
Hsieh, T. H.
;
Tzeng, J. T.
Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel three-region charge-pumping technique is proposed to characterize interface trap (Nit) and bulk oxide charge Q(ox) creation in the channel and in the drift regions separately. The growth rates of N-it and Q(ox) are extracted from the proposed method. A two-dimensional numerical device simulation is performed to gain insight into device degradation characteristics in different stress conditions. This paper shows that a maximum I-g stress causes the largest drain current and subthreshold slope degradation because of both N-it generation in the channel and Q(ox) creation in the bird's beak region. The impact of oxide trap property and location on device electrical characteristics is analyzed from measurement and simulation.