Browsing by Author "KAO, MJ"

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CHARACTERISTICS OF GRADED-LIKE MULTIPLE-DELTA-DOPED GAAS FIELD-EFFECT TRANSISTORS
(1995-05-08)
KAO, MJ
;
HSU, WC
;
HSU, RT
;
WU, YH
;
LIN, TY
HIGH CARRIER DENSITY AND MOBILITY IN GAAS/INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURES
(1995-01-01)
KAO, MJ
;
HSU, WC
;
SHIEH, HM
;
LIU, WC
;
CHANG, CY
Double-quantum-well GaAs/InGaAs/GaAs pseudomorphic heterostructures by delta-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 10(13) cm-2 along with an enhanced mobility of 2100 cm2/V.s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.