Browsing by Author "KUO Hao-Chung"

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Light Emitting Diode Device
(2015-10-08)
CHU Hung-Shen
;
LIN Da-Wei
;
KUO Hao-Chung
A light emitting diode device comprises the transparent conductive layer is formed on the conductive substrate, the p-type semiconductor layer is formed on the transparent conductive layer, the active layer is formed on the p-type semiconductor layer, and the n-type semiconductor layer is formed on the active layer, the buffer layer is formed on the n-type semiconductor layer, and a metal electrode is formed on a rough and uneven surface of the buffer layer, in which the electrical property of the n-type semiconductor layer is opposites to that of the p-type semiconductor layer. The reflective effect within the light emitting diode device can be increased. In addition, by reducing the thickness of the undoped GaN layer, the absorption of ultraviolet light inside the components of the light emitting diode device can be reduced.
Light Emitting Diode Device Having Super Lattice Structure and a Nano-Structure Layer
(2015-10-08)
LEE Chia-Yu
;
LIN Da-Wei
;
TZOU An-Jye
;
KUO Hao-Chung
A light emitting diode device is provided, which comprises a silicon-based substrate, a buffer layer, a super lattice structure layer, a nano-structure layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The buffer layer is formed on the silicon-based substrate, the super lattice structure layer is formed on the buffer layer, the nano-structure layer is formed on the super lattice structure layer, a first semiconductor layer is formed on the nano-structure layer, and the light emitting layer is formed between the first semiconductor layer and the second semiconductor layer. The super lattice layer and the nano-structure can release the stress within the light emitting diode device, and reduce the epitaxy defect, so that the internal quantum effect and the external quantum effect can be increased.
METHOD FOR FABRICATING A LATERAL-EPITAXIAL-OVERGROWTH THIN-FILM LIGHT-EMITTING DIODE WITH NANOSCALE-ROUGHENED STRUCTURE
(2014-12-04)
LEE Chia-Yu
;
WANG Chao-Hsun
;
CHIU Ching-Hsueh
;
KUO Hao-Chung
A method for fabricating a lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure is provided. The lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure has a substrate, a metal bonding layer formed on the substrate, a first electrode formed on the metal bonding layer, a semiconductor structure formed on the first electrode with a lateral-epitaxial-growth technology, and a second electrode formed on the semiconductor structure. A nanoscale-roughened structure is formed on the semiconductor structure except the region covered by the second electrode. Lateral epitaxial growth is used to effectively inhibit the stacking faults and reduce the thread dislocation density in the semiconductor structure to improve the crystallization quality of the light-emitting layer and reduce leakage current. Meanwhile, the surface roughened structure on the semiconductor structure can promote the external quantum efficiency.
PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
(2015-07-02)
LIN Chien-Chung
;
KUO Hao-Chung
;
CHEN Kuo-Ju
;
HAN Hau-Vei
;
CHEN Hsin-Chu
A package structure applied for method for a solid-state lighting apparatus is disclosed in the present invention and at least comprises a frame, a light emitting member, an encapsulant and a plurality of fluorescent powders. The light emitting member is disposed in the frame. The encapsulant is provided to fill the frame for packing the light emitting member therein, and the fluorescent powders are dispersed in the encapsulant. Furthermore, there is a plurality of scattering particles doped into the encapsulant.