Browsing by Author "Kang, Jinfeng"

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Design and Optimization Methodology for 3D RRAM Arrays
(2013)
Deng, Yexin
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Chen, Hong-Yu
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Gao, Bin
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Yu, Shimeng
;
Wu, Shih-Chieh
3D RRAM arrays are studied at the device-and architecture-levels. The memory cell performance for a horizontal cross-point is shown experimentally to be essentially comparable to vertical pillar-around geometry. Array performances (read/write, energy, and speed) of different 3D architectures are investigated by SPICE simulation, showing horizontal stacked RRAM is superior but suffers from higher bit cost. Adopting a bi-layer pillar electrode structure is demonstrated to enlarge the array size in 3D vertical RRAM. Design guidelines are proposed for the 3D VRRAM: it shows that increasing the number of stacks of VRRAM while keeping the total bits the same, as well as scaling of feature size (F), are critical for reducing RC delay and energy consumption.
Metal-Gate/High-kappa/Ge nMOS at Small CET With Higher Mobility Than SiO2/Si at Wide Range Carrier Densities
(2013-02-01)
Liao, C. C.
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Ku, T. C.
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Lin, M. H.
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Zeng, Lang
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Kang, Jinfeng
High-performance TaN/TiLaO/La2O3/SiO2/(111)-Ge nMOSFETs show high mobility of 432 cm(2)/V . s at 10(13) cm(-2) carrier density (N-s), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO2/Si universal mobility at wide medium-high N-s range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO2 interfacial layer, and YbGex/n-Ge contact.
Recommended Methods to Study Resistive Switching Devices
(2019-01-01)
Lanza, Mario
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Wong, H-S Philip
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Pop, Eric
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Ielmini, Daniele
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Strukov, Dimitri
Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.