Browsing by Author "Kanicki, Jerzy"

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Current-scaling a-Si : H TFT pixel-electrode circuit for AM-OLEDs: Electrical properties and stability
(2007-09-01)
Lee, Hojin
;
Lin, Yen-Chung
;
Shieh, Han-Ping D.
;
Kanicki, Jerzy
;
顯示科技研究所
We fabricated and characterized the hydrogenate amorphous-silicon thin-film transistor (a-Si:H TFT) pixel-electrode circuit with the current-scaling function that can be used for active-matrix organic light-emitting displays (AM-OLEDs). As expected from previously reported simulation results, the fabricated pixel-electrode circuit showed an enhanced current-scaling performance for a high-resolution AM-OLED based on a-Si:H TFTs in comparison to other types of current-driven pixel circuits. It also showed a better electrical and thermal stability for different OLED current levels in comparison to the conventional current-driven pixel-electrode circuit.
Photosensitivity of amorphous IGZO TFTs for active-matrix flat-panel displays
(2008-01-01)
Chuang, Chiao-Shun
;
Fung, Tze-Ching
;
Mullins, Barry G.
;
Nomura, Kenji
;
Kamiya, Toshio
We studied the optical and electrical properties of the amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). To develop a-IGZO density-of-states model, intrinsic a-IGZO optical properties such as optical band gap and Urbach energy, and TFT characteristics under illumination are investigated During the a-IGZO TFTs illumination with the wavelengths ranging from 460 to 660 nm, the off-state drain current only slightly increases while a large increase was observed for the wavelength below 400 nm. Threshold voltage and subthreshold swing are also only slightly modified between 460 to 660 nm, while field-effect mobility is almost unchanged in the investigated photon energy range. The observed results are consistent with the a-IGZO optical energy band gap of about 3.05 eV. This study suggest that the a-IGZO TFTs are light sensitive above 3.0 eV and photogenerated electrons are more mobile than holes within device channel region.