Browsing by Author "Kao, CH"

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Characterization and Modeling of on-chip spiral inductors for Si RFICs
(2002-02-01)
Chao, CJ
;
Wong, SC
;
Kao, CH
;
Chen, MJ
;
Leu, LY
The paper presents a complete characterization of on-chip inductors fabricated in BiCMOS technology. First, a study of the scaling effect of inductance on geometry and structure parameters is presented to provide a clear guideline on inductor scaling with suitable quality factors. The substrate noise analysis and noise reduction techniques are then investigated. It is shown that floating well can improve both quality factor and noise elimination by itself under 3 GHz and together with a guard ring above 3 GHz. Finally, for accurate circuit simulations, a new inductor model is developed for predicting the skin effect and eddy effect and associated quality factor and inductance.
New insights on RF CMOS stability related to bias, scaling, and temperature
(2000)
Su, JG
;
Wong, SC
;
Chang, CY
;
Chiu, KY
;
Huang, TY
The stability issues of CMOS devices for RF applications were studied. The stability factor of MOS devices based on the small-signal model (SSM) parameters was derived, for the first time. The results reveal some new insights on the effects of biasing, and scaling parameters on the stability; and were subsequently confirmed by our experimental results. Our results also show that unconditional stability of RF CMOS devices can be obtained with proper biasing and device geometries. Finally, the effects of temperature on stability were also: investigated. Our results suggest that careful attention needs to be paid for stable low temperature operation.
Oxide grown on polycrystal silicon by rapid thermal oxidation in N2O
(2006)
Kao, CH
;
Lai, CS
;
Lee, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this paper, rapid thermal processing (RTP) N2O polyoxides were studied in terms of oxidation temperature and thickness with O-2 oxidation polyoxides as comparison. Atomic force microscopy, transmission electron microscopy, and secondary ion mass spectroscopy measurements were employed to correlate the electrical characteristics with the physical structures. Results showed that RTP N2O-grown polyoxides exhibited better characteristics on the leakage current, E-bd, trappings and Q(bd). It was found that it was the proper amount of nitrogen incorporated in the polyoxide improving the interface of the polyoxide/polysilicon, consequently improving the electrical quality. The initial hole-trapping phenomenon during the constant current stress, which was due to the incorporated nitrogen, was also observed in the N2O-grown polyoxides. The two-step RTP process, i.e., first RTP oxidizing the polysilicon in O-2 and then RTP oxidizing in N2O, could achieve polyoxide of good characteristics by incorporating the proper amount of nitrogen into the polyoxide. (c) 2005 The Electrochemical Society.
The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing
(1997-11-01)
Kao, CH
;
Lai, CS
;
Lee, CL
;
交大名義發表
;
電子工程學系及電子研究所
A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm(2)). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.
The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing
(1997-11-01)
Kao, CH
;
Lai, CS
;
Lee, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm(2)). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.