Browsing by Author "Kao, Hsuan-ling"

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Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors
(2017-09-01)
Chen, Po-Chun
;
Chiu, Yu-Chien
;
Zheng, Zhi-Wei
;
Lin, Ming-Huei
;
Cheng, Chun-Hu
In this study, we demonstrated a p-type and n-type SnO TFTs on flexible polyimide substrate. The fabricated p-type SnO TFT showed a high I-on/I-off of 5.7 x 10(5) and a high mu(FE) of 10.7 cm(2) V-1 s(-1). Through optimizing the oxygen plasma condition, the n-type channel TFT transfered from prime p-type channel exhibits excellent characteristics, including a high on/off current ratio of 6.6 x 10(3), a low threshold voltage of -0.13 V, and a very high field-effect mobility of 28 cm(2) V-1 s(-1). This proposed low-temperature oxygen plasma treatment shows the potential in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.
Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal-Oxide-Semiconductor Field-Effect Transistors on SiC Substrate
(2010)
Chang, Tsu
;
Kao, Hsuan-ling
;
Liu, S. L.
;
Deng, Joseph D. S.
;
Horng, K. Y.
In this paper we report the DC characteristics and radio frequency (RF) power performance improvement as high as 6.6% of asymmetric lightly doped drain metal-oxide-semiconductor field-effect transistors (asymmetric LDD MOSFET, AMOSFET) with 50-mu m-thick silicon substrates on SiC substrates. The self-heating and parasitic effects of large size AMOSFETs with 50-mu m-thick silicon on SiC substrates are reduced owing to good heat dissipation and less lossy behaviors of thinned silicon substrates and SiC substrates. Therefore, the power gain, saturation output power, and power added efficiency of AMOSFETs with 50-mu m-thick Si substrates mounted on SiC substrates is improved. (C) 2010 The Japan Society of Applied Physics