Browsing by Author "Kao, JS"

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In-situ O-2-plasma passivation effect on poly-Si TFTs during ion plating capping oxide
(1997)
Yeh, CF
;
Chen, TJ
;
Lin, MT
;
Kao, JS
;
交大名義發表
A novel method has been developed to effectively reduce defect density in poly-Si thin-film transistors (TFTs) using ion plating (IF) oxides as capping layers. The characteristics of TFTs with TP capping oxides are superior to those of TFTs with TEOS capping oxides due to the in-situ O-2-plasma passivation effect during IP oxide deposition. The hydrogenation effect on the novel devices is not very evident because their trap-state density has been reduced by O-2 plasma. poly-Si TFTs with IP capping oxides still maintain good performance even stressing at 100 degrees C with a bias of 20 V.
Investigation of silicon oxide films prepared by room-temperature ion plating
(1998-01-15)
Yeh, CF
;
Chen, TJ
;
Fan, CL
;
Kao, JS
;
電子工程學系及電子研究所
To develop excellent silicon oxide film using low temperature method, ion plating (IP) oxide is investigated. Physicochemical characterizations of the IP oxide are studied using ellipsometry, Fourier transform infrared spectrometry, and P-etch rate measurement. The IP oxide is a high-density dielectric with strained bonds. Electrical characterizations are also analyzed using capacitance-voltage and current-voltage techniques through metal-oxide-semiconductor capacitors. The IP oxide has a low leakage current, a high breakdown field, and low interface state density. In addition, IP oxide annealed in N-2 ambient is also studied. After high-temperature annealing, the characteristics of IP oxide become comparable to those of thermal oxide. The novel oxide him is successfully applied as a gate insulator to low-temperature processed (less than or equal to 620 degrees C) polysilicon thin-film transistors. (C) 1998 American Institute of Physics.
O-2-plasma passivation effects on polysilicon thin film transistors using ion plating method
(1998-01-01)
Yeh, CF
;
Chen, TJ
;
Lin, MT
;
Kao, JS
;
電子工程學系及電子研究所
A novel method has been developed for efficiently reducing defect density in polysilicon thin film transistors using ion plated oxides as capping layers. The characteristics of these novel thin film transistors are superior to those of thin film transistors with plasma-enhanced chemical vapor deposited tetraethylorthosilicate capping oxides due to an in situ O-2-plasma passivation effect during ion plating oxide deposition. The passivation effect of a NH3 plasma on the novel devices was also studied. The in situ ion plating O-2 plasma shows a better passivation efficiency on trap states than the NH3 plasma. Polysilicon thin film transistors with ion plating capping oxides are hardly degraded even when stressed with a bias of 20 V at 100 degrees C.
Passivation effects of ion plating capping oxide on poly-Si TFTs
(1997)
Yeh, CF
;
Chen, TJ
;
Kao, JS
;
交大名義發表
;
電子工程學系及電子研究所
Physical characteristics of N-2 annealing on room-temperature-deposited ion plating oxide
(1997-03-24)
Yeh, CF
;
Chen, TJ
;
Kao, JS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The effects of N-2 annealing on the physical properties of room-temperature-deposited ion plating (IF) oxide have been characterized. As-deposited IP oxide exhibits higher refractive index and dielectric constant values than high-temperature-annealed IP oxide. Strained bonds existing in as-deposited oxide can be relaxed by N-2 annealing depending on the annealing temperature. After annealing at 800 degrees C, the physical characteristics of IP oxide are comparable to those of thermal oxide. (C) 1997 American Institute of Physics.
Physical characteristics of N-2 annealing on room-temperature-deposited ion plating oxide
(1997-03-24)
Yeh, CF
;
Chen, TJ
;
Kao, JS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The effects of N-2 annealing on the physical properties of room-temperature-deposited ion plating (IF) oxide have been characterized. As-deposited IP oxide exhibits higher refractive index and dielectric constant values than high-temperature-annealed IP oxide. Strained bonds existing in as-deposited oxide can be relaxed by N-2 annealing depending on the annealing temperature. After annealing at 800 degrees C, the physical characteristics of IP oxide are comparable to those of thermal oxide. (C) 1997 American Institute of Physics.