Browsing by Author "Kao, Jen-Chieh"

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60-GHz SiGe BiCMOS Dual-Conversion Down-Converter: Schottky Diode RF Mixer and Analog Gilbert IF Mixer with Microwave Quadrature Generator
(2016)
Kao, Jen-Chieh
;
Meng, Chinchun
;
Wei, Hung-Ju
;
Huang, Guo-Wei
;
電機工程學系
A 60 GHz dual-conversion down-converter using 0.35 mu m SiGe BiCMOS process is demonstrated in this paper. A Schottky diode ring mixer with wideband Marchand balun works as the 60-GHz RF mixer while two analog Gilbert micromixers with LO port pumped by two quadrature couplers work as IF mixers. The cut-off frequency of a Schottky diode makes a fundamental RF ring mixer possible because the series resistance of a Schottky diode is effectively reduced by the n+ buried layer in SiGe BiCMOS process. A Gilbert micromixer with an IF buffer is used to accommodate the single-ended output of the RF ring mixer. By combining these advantages, a dual-conversion down-converter is achieved. The converter has about 8 dB conversion gain, 10 GHz RF bandwidth of 50 - 60 GHz, 100 MHz IF bandwidth when LO1 power is 8 dBm and LO2 power is 2 dBm.
V-Band Dual-Conversion Down-Converter with Schottky-Diode Ring-Mixer Using 0.35 mu m SiGe BiCMOS Process
(2015)
Kao, Jen-Chieh
;
Meng, Chinchun
;
Lo, Tai-Lin
;
Huang, Guo-Wei
;
電機學院
A V-band dual-conversion downconverter using 0.35 mu m SiGe BiCMOS process is demonstrated in this paper. This downconverter contains three sub-circuits, a V-band Schottky-diode RF mixer with Marchand balun, a 15-GHz low-noise IF buffer amplifier, and an IF Gilbert mixer. The Schottky diode has high cutoff frequency because of the n+ buried layer in the SiGe BiCMOS process. Thus, a fundamental ring-mixer is employed as the RF mixer. A Marchand balun has a broadband feature, and the feature has been used to achieve converter for high frequency circuit applications. In addition to this, a low-noise buffer amplifier is used to provide enough gain performance. By combining these advantages, a dual-conversion downconverter is successfully achieved. The downconverter has about 6 dB conversion loss, 18 GHz RF bandwidth, 800 MHz IF bandwidth and about -6 dBm IP1dB when LO1 power is 5 dBm and LO2 power is 8 dBm.