Browsing by Author "Kao, LM"

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Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process
(2002-08-01)
Chang, TY
;
Lei, TF
;
Chao, TS
;
Chen, SW
;
Kao, LM
In our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process. (C) 2002 Elsevier Science Ltd. All rights reserved.