Browsing by Author "Kao, Ming-Jer"

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3-D Stacked Technology of DRAM-Logic Controller Using Through-Silicon Via (TSV)
(2018-01-01)
Shen, Wen-Wei
;
Lin, Yu-Min
;
Chen, Shang-Chun
;
Chang, Hsiang-Hung
;
Chang, Tao-Chih
This paper describes a four-layer-stacked chip with 45-nm dynamic random access memory (DRAM) dice and 65-nm logic controller, which are interconnected by backside-via-last through-silicon via (TSV) processes. Fabrication of backside-via-last process and multiple die stacking using chip-to-chip bonding are presented with electrical connection between TSV (5-mu m-diameter/ 50-mu m-length) and Cu interconnects. Excellent fabrication of stacked dice verified that the micro bumps with 12-mu m diameter are bonded using three step temperature bonding profile. Further stacked DRAM/ Logic performance and system verifications are demonstrated successfully using 3-D heterogeneous integration.
Bipolar resistive switching of chromium oxide for resistive random access memory
(2011-08-01)
Chen, Shih-Cheng
;
Chang, Ting-Chang
;
Chen, Shih-Yang
;
Chen, Chi-Wen
;
Chen, Shih-Ching
This study investigates the resistance switching characteristics of Cr(2)O(3)-based resistance random access memory (RRAM) with Pt/Cr(2)O(3)/TiN and Pt/Cr(2)O(3)/Pt structures. Only devices with Pt/Cr(2)O(3)/TiN structure exhibit bipolar switching behavior after the forming process because TiN was able to work as an effective oxygen reservoir but Pt was not. Oxygen migration between Cr(2)O(3) and TiN was observed clearly before and after resistance switching from Auger electron spectroscopy (AES) analysis. Both low resistance state, ON state, and high resistance state, OFF state, of Pt/Cr(2)O(3)/TiN structures are stable and reproducible during a successive resistive switching. The resistance ratio of ON and OFF state is over 10(2), on top of that, the retention properties of both states are very stable after 10(4) s with a voltage of -0.2 V. (C) 2010 Elsevier Ltd. All rights reserved.
Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiO(X)/TiN Structure
(2011-04-01)
Syu, Yong-En
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Hung, Ya-Chi
;
Chang, Kuan-Chang
This letter investigates the resistive random access memory device characteristics and the physical mechanism of a device with a TiN/CoSiO(X)/Pt structure. In general, the mechanism is regarded as a redox reaction in the dielectric interface between the Ti electrode and the conductive filament. Furthermore, the switching voltage is correlated only with redox reaction potential. A designed circuit is used to accurately observe the resistance switching process with a pulse generator and an oscilloscope, which reveals that the switching process is related to both time and voltage. The constant switching energy demonstrates that the switching mechanism is the redox reaction.
Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN Structure
(2011-04-01)
Syu, Yong-En
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Hung, Ya-Chi
;
Chang, Kuan-Chang
This letter investigates the resistive random access memory device characteristics and the physical mechanism of a device with a TiN/CoSiOX/Pt structure. In general, the mechanism is regarded as a redox reaction in the dielectric interface between the Ti electrode and the conductive filament. Furthermore, the switching voltage is correlated only with redox reaction potential. A designed circuit is used to accurately observe the resistance switching process with a pulse generator and an oscilloscope, which reveals that the switching process is related to both time and voltage. The constant switching energy demonstrates that the switching mechanism is the redox reaction.