Browsing by Author "Katase, Takayoshi"

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Arbitrary control of the diffusion potential between a plasmonic metal and a semiconductor by an angstrom-thick interface dipole layer
(2020-01-21)
Oshikiri, Tomoya
;
Sawayanagi, Hiroki
;
Nakamura, Keisuke
;
Ueno, Kosei
;
Katase, Takayoshi
Localized surface plasmon resonances (LSPRs) are gaining considerable attention due to the unique far-field and near-field optical properties and applications. Additionally, the Fermi energy, which is the chemical potential, of plasmonic nanoparticles is one of the key properties to control hot-electron and -hole transfer at the interface between plasmonic nanoparticles and a semiconductor. In this article, we tried to control the diffusion potential of the plasmonic system by manipulating the interface dipole. We fabricated solid-state photoelectric conversion devices in which gold nanoparticles (Au-NPs) are located between strontium titanate (SrTiO3) as an electron transfer material and nickel oxide (NiO) as a hole transport material. Lanthanum aluminate as an interface dipole layer was deposited on the atomic layer scale at the three-phase interface of Au-NPs, SrTiO3, and NiO, and the effect was investigated by photoelectric measurements. Importantly, the diffusion potential between the plasmonic metal and a semiconductor can be arbitrarily controlled by the averaged thickness and direction of the interface dipole layer. The insertion of an only one unit cell (uc) interface dipole layer, whose thickness was less than 0.5 nm, dramatically controlled the diffusion potential formed between the plasmonic nanoparticles and surrounding media. This is a new methodology to control the plasmonic potential without applying external stimuli, such as an applied potential or photoirradiation, and without changing the base materials. In particular, it is very beneficial for plasmonic devices in that the interface dipole has the ability not only to decrease but also to increase the open-circuit voltage on the order of several hundreds of millivolts.
Plasmon-Assisted Polarity Switching of a Photoelectric Conversion Device by UV and Visible Light Irradiation
(2018-06-28)
Nakamura, Keisuke
;
Oshikiri, Tomoya
;
Ueno, Kosei
;
Katase, Takayoshi
;
Ohta, Hiromichi
The plasmon-induced charge separation between metallic nanoparticles and a semiconductor following an electron transfer process has been extensively studied as one of the mechanisms in plasmonic light energy conversion devices. In this study, we propose that the switching of photocurrent polarity can be realized by changing the rectification properties of plasmonic photoelectric conversion devices and utilizing the difference in carrier mobility between electrons and holes. We fabricated plasmonic photoelectric conversion devices using gold nanoparticles (Au-NPs), nickel oxide (NiO), and mobility-limited TiO2 (ML-TiO2) to control the photocurrent polarity according to irradiation wavelengths of visible and UV light. A pulsed laser deposition technique was employed to deposit the ML-TiO2 and NiO layers. The photoelectric properties were measured, and in situ spectroelectrochemical measurements were performed to investigate the relationship between the rectification properties of the plasmonic photoelectric conversion devices and the change in the Fermi level of the Au-NPs under UV light irradiation condition. Additionally, UV and visible light irradiation selectively induced the current of opposite polarity with the small applied voltage. The electron transfer phenomena from ML-TiO2 to Au-NPs and from Au-NPs to ML-TiO2 give us important information to understand plasmon-related charge separation.