Browsing by Author "Kechiantz, A."

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Ultrafast carrier capture in charged InAs quantum dots
(2006-07-15)
Sun, K. W.
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Kechiantz, A.
;
應用化學系
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應用化學系分子科學碩博班
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Department of Applied Chemistry
We report theoretical and experimental results of our investigation on carrier capture and relaxation processes in undoped and modulation-doped InAs/GaAs self-assembled quantum dots (QDs). We find that carrier capture and relaxation in the ground state is faster in the modulation-doped quantum dots compared to the case in neutral dots at an excitation level as low as one electron-hole pair per dot. The ultrafast photoluminescence (PL) transient rise time observed in the charged dots is attributed to the relaxing of strained field induced by the presence of cold carriers in the dots. The Hamiltonian of electron's interaction with local vibrating field and carrier capture time are also calculated. (c) 2006 Elsevier B.V. All rights reserved.