Browsing by Author "Kennedy, M. J."

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Fully Integrated Photonic Microwave Tracking Generator on Heterogeneous III-V/Si Platform
(2017-01-01)
Chao, Rui-Lin
;
Liang, Linjun
;
Shi, Jin-Wei
;
Hulme, Jared
;
Kennedy, M. J.
Fully-integrated photonic microwave tracking generators are demonstrated for the first time. By sweeping the wavelength separation among two-locked DFBs and one tunable laser, a two-tone photo-generated RF signal with tunable difference in frequency can be generated. 2017 Optical Society of America
Fully Integrated Photonic Millimeter-Wave Tracking Generators on the Heterogeneous III-V/Si Platform
(2018-05-15)
Chao, Rui-Lin
;
Liang, Linjun
;
Shi, Jin-Wei
;
Komljenovic, Tin
;
Hulme, Jared
Fully integrated photonic microwave/millimeterwave (MMW) tracking generators, which include wavelength-tunable lasers, distributed feedback lasers, phase modulators, and high-speed photodiodes (PDs), are demonstrated on the heterogeneous integrated III-V-on-Si photonic platform. Two on-chip lasers are locked by an external optical phase-locked loop (OPLL), and the two-tone radio-frequency (RF) signals from the on-chip fast PDs can be photonically generated through the heterodyne-beating process between the wavelengthtunable laser and the OPLL output. Furthermore, the frequency spacing between such two-tone RF signals can be tracked by the oscillation frequency in the OPLL with a wide tunability (near dc to 10 GHz). Fast and truly continuous scanning of photo-generated MMW signals thus becomes feasible by simultaneously tuning the OPLL and the central wavelength of the tunable laser in the demonstrated photonic integrated circuit.
Heterogeneously Integrated InP Based 14,vanescentlyCoupled High-Speed and High-Power p-i-n Photodiodes on Silicon-on-Insulator (SOI) Substrate
(2016)
Hulme, Jared
;
Kennedy, M. J.
;
Chao, Rui-Lin
;
Komljenovic, Tin
;
Shi, Jin-Wei
we demonstrate InP based evanescently-coupled pi-n photodiodes heterogeneously integrated onto silicon-on insulator substrate. Using advanced waveguide structures and fabrication processes, it simultaneously achieves 67 GHz O-E bandwidth (RC-free), broad optical window (1520-1600nm) with 0.5 A/W internal responsivity, and high saturation currents (9 mA at 70 GHz).