Browsing by Author "Ker Ming-Dou"

Now showing 1 - 13 of 13

CURRENT STIMULATOR
(2013-07-04)
Lin Chun-Yu
;
Li Yi-ju
;
Ker Ming-Dou
The disclosure relates to a current stimulator, which comprises a high voltage output module, a voltage control module and a charge pump module. The high voltage output module includes a plurality of stacked transistors, and receives an input control signal able to turn on/off the current stimulator and a first voltage. A second voltage is generated by adding the voltages output by all the transistors to the first voltage and then output to the voltage control module. The voltage control module outputs a voltage control signal able to stabilize the stimulus current for the load according to the second voltage and the load impedance variation. The charge pump regulates the first voltage according to the voltage control signal, and outputs the regulated first voltage to the high voltage output module. Thereby, the current stimulator can adaptively stabilize the stimulus current, responding to load impedance variation.
Current stimulator
(2014-11-18)
Lin Chun-Yu
;
Li Yi-Ju
;
Ker Ming-Dou
The disclosure relates to a current stimulator, which comprises a high voltage output module, a voltage control module and a charge pump module. The high voltage output module includes a plurality of stacked transistors, and receives an input control signal able to turn on/off the current stimulator and a first voltage. A second voltage is generated by adding the voltages output by all the transistors to the first voltage and then output to the voltage control module. The voltage control module outputs a voltage control signal able to stabilize the stimulus current for the load according to the second voltage and the load impedance variation. The charge pump regulates the first voltage according to the voltage control signal, and outputs the regulated first voltage to the high voltage output module. Thereby, the current stimulator can adaptively stabilize the stimulus current, responding to load impedance variation.
Electrostatic discharge protection circuit
(2013-09-03)
Ker Ming-Dou
;
Lin Chun-Yu
;
Wang Chang-Tzu
An electrostatic discharge (ESD) protection circuit, suitable for an input stage circuit including a first N channel metal oxide semiconductor (NMOS) transistor, is provided. The ESD protection circuit includes an P channel metal oxide semiconductor (PMOS) transistor and an impedance device, in which the PMOS transistor has a source coupled to a gate of the first NMOS transistor, and a drain coupled to a source of the first NMOS transistor, and the impedance device is coupled between a gate of the PMOS transistor and a first power rail to perform a initial-on ESD protection circuit. The ESD protection circuit formed by the PMOS transistor and the resistor is capable of increasing the turn-on speed of the ESD protection circuit and preventing the input stage circuit from a CDM ESD event.
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT
(2011-08-18)
Ker Ming-Dou
;
Lin Chun-Yu
;
Wang Chang-Tzu
An electrostatic discharge (ESD) protection circuit, suitable for an input stage circuit including a first N channel metal oxide semiconductor (NMOS) transistor, is provided. The ESD protection circuit includes an P channel metal oxide semiconductor (PMOS) transistor and an impedance device, in which the PMOS transistor has a source coupled to a gate of the first NMOS transistor, and a drain coupled to a source of the first NMOS transistor, and the impedance device is coupled between a gate of the PMOS transistor and a first power rail to perform a initial-on ESD protection circuit. The ESD protection circuit formed by the PMOS transistor and the resistor is capable of increasing the turn-on speed of the ESD protection circuit and preventing the input stage circuit from a CDM ESD event.
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT
(2013-11-28)
Ker Ming-Dou
;
Lin Chun-Yu
;
Wang Chang-Tzu
An electrostatic discharge (ESD) protection circuit, suitable for an input stage circuit including a first N channel metal oxide semiconductor (NMOS) transistor, is provided. The ESD protection circuit includes an P channel metal oxide semiconductor (PMOS) transistor and an impedance device, in which the PMOS transistor has a source coupled to a gate of the first NMOS transistor, and a drain coupled to a source of the first NMOS transistor, and the impedance device is coupled between a gate of the PMOS transistor and a first power rail to perform a initial-on ESD protection circuit. The ESD protection circuit formed by the PMOS transistor and the resistor is capable of increasing the turn-on speed of the ESD protection circuit and preventing the input stage circuit from a CDM ESD event.
Electrostatic discharge protection device
(2013-08-13)
Huang Yeh-Jen
;
Jou Yeh-Ning
;
Ker Ming-Dou
;
Chen Wen-Yi
;
Hung Chia-Wei
An electrostatic discharge (ESD) protection device including a substrate, a first doped region, a second doped region, and a third doped region, a gate and a plurality of contacts is disclosed. The substrate includes a first conductive type. The first doped region is formed in the substrate and includes a second conductive type. The second doped region is formed in the substrate and includes the second conductive type. The third doped region is formed in the substrate, includes the first conductive type and is located between the first and the second doped regions. The gate is formed on the substrate, located between the first and the second doped regions and comprises a first through hole. The contacts pass through the first through hole to contact with the third doped region.
ELECTROSTATIC DISCHARGE PROTECTION DEVICE
(2012-06-14)
HUANG Yeh-Jen
;
Jou Yeh-Ning
;
Ker Ming-Dou
;
Chen Wen-Yi
;
Hung Chia-Wei
An electrostatic discharge (ESD) protection device including a substrate, a first doped region, a second doped region, and a third doped region, a gate and a plurality of contacts is disclosed. The substrate includes a first conductive type. The first doped region is formed in the substrate and includes a second conductive type. The second doped region is formed in the substrate and includes the second conductive type. The third doped region is formed in the substrate, includes the first conductive type and is located between the first and the second doped regions. The gate is formed on the substrate, located between the first and the second doped regions and comprises a first through hole. The contacts pass through the first through hole to contact with the third doped region.
ESD protection circuitry with multi-finger SCRS
(2013-02-19)
Ker Ming-Dou
;
Lin Chun-Yu
;
Wang Chang-Tzu
Self-triggered Multi-finger SCRs used in ESD protection circuitry capable of turning on all SCR fingers of the multi-finger SCRs include a first source, a second source, N SCR units, (N−1) diodes, and N resistors. Each of the N SCR units includes a first node, a second node coupled to the second source, and a trigger node. An nth diode of the (N−1) diodes is coupled between a first node of an nth SCR unit and a trigger node of an (n+1)th SCR unit. An nth resistor is coupled between the first node of the nth SCR unit and the first source, wherein n and N are integers. The (N−1) diodes can be replaced by directly coupled the first node of the nth SCR unit to the trigger node of the (n+1)th SCR unit when a trigger pulse is applied at the trigger node of a first SCR unit.
LOAD-ADAPTIVE BIOELECTRIC CURRENT STIMULATOR
(2012-11-15)
Ker Ming-Dou
;
Chen Wei-Ling
;
Lin Chun-Yu
The disclosure relates to a load-adaptive bioelectrical current stimulator, which comprises a current output module, an adaptation module and a control module. The current output module generates a stimulus current to an electrode. The adaptation module detects the electrical status of the stimulus current passing through the electrode and generates a feedback signal to the control module. According to the feedback signal, the control module controls the current output module to stabilize the output status of the stimulus current adaptively. Thereby, the load-adaptive bioelectrical current stimulator can use the feedback control mechanism to regulate the value of the stimulus current to adapt to variation of load impedance.
Load-adaptive bioelectric current stimulator
(2013-09-03)
Ker Ming-Dou
;
Chen Wei-Ling
;
Lin Chun-Yu
The disclosure relates to a load-adaptive bioelectrical current stimulator, which comprises a current output module, an adaptation module and a control module. The current output module generates a stimulus current to an electrode. The adaptation module detects the electrical status of the stimulus current passing through the electrode and generates a feedback signal to the control module. According to the feedback signal, the control module controls the current output module to stabilize the output status of the stimulus current adaptively. Thereby, the load-adaptive bioelectrical current stimulator can use the feedback control mechanism to regulate the value of the stimulus current to adapt to variation of load impedance.
On-Chip Noise Filter Circuit
(2012-09-20)
Ker Ming-Dou
;
Yen Cheng-Cheng
;
Chen Tung-Yang
A noise filter circuit for an IC is provided. The noise filter circuit comprises a decoupling unit coupled to a power pad of the IC and a current amplifier circuit coupled to the decoupling unit and the power pad of the IC. The decoupling unit generates a first current in response to a transient voltage being on the power pad of the IC. The current amplifier circuit drains a second current from the power pad of the IC according to the first current.
On-chip noise filter circuit
(2014-02-11)
Ker Ming-Dou
;
Yen Cheng-Cheng
;
Chen Tung-Yang
A noise filter circuit for an IC is provided. The noise filter circuit comprises a decoupling unit coupled to a power pad of the IC and a current amplifier circuit coupled to the decoupling unit and the power pad of the IC. The decoupling unit generates a first current in response to a transient voltage being on the power pad of the IC. The current amplifier circuit drains a second current from the power pad of the IC according to the first current.
Self-reset transient-to-digital convertor and electronic product utilizing the same
(2015-04-07)
Ker Ming-Dou
;
Yen Cheng-Cheng
;
Chen Tung-Yang
;
Tsai Ching-Ling
;
Chen Shih-Fan
A self-reset transient-to-digital convertor which includes at least one transient detection circuit is disclosed. The transient detection circuit, coupled between a first power line and a second power line, includes at least one voltage drop unit, a current amplifier unit, and a time control unit. When an ESD event occurs, the voltage drop unit is conducted to pass through an ESD current. The current amplifier unit, coupled between the voltage drop unit and the first power line, is conducted by the ESD current to set the level of a first node. The time control unit, coupled between the first node and the second power line, is configured to gradually drain the ESD current away. Wherein, each of the transient detection circuit generates a digital code according to the level of the first node.