Browsing by Author "Khakhulin, D. A."

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Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing
(2017-01-01)
Tominov, R. V.
;
Zamburg, E. G.
;
Khakhulin, D. A.
;
Klimin, V. S.
;
Smirnov, V. A.
The resistive switching effect in ZnxTiyHfzOi nanocomposite film, grown by pulsed laser deposition technique, was investigated. It was shown that ZnxTiyHfzOi film surface had a granular structure with 0.8 +/- 0.4 mu m(2) grain size and 7.3 +/- 5.1 nm grain height. Resistive switching from high resistance state (HRS) to low resistance state (LRS) was occurred at 0.9 +/- 0.4 V, and from LRS to HRS at 1.5 +/- 0.2 V. HRS/LRS ratio was 2.6. The results can be used for nanocomposite-metaloxide-film RRAM fabrication.