Browsing by Author "Kim, J. D."
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Item type:Item, Large Area MoS2 van der Waals Epitaxy on III-Ns and the Epitaxial Formation of a n-MoS2/p-InGaN Diode(2016-01-01) ;Jung, Kyooho ;Liu, Che-Yu ;Kim, J. D. ;Choi, WonsikZhou, WeidongEpitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy. Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.