Browsing by Author "Kin, K. T."

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Characterization of inter-poly high-kappa dielectrics for next generation stacked-gate flash memories
(2006)
Chen, Y. Y.
;
Li, T. H.
;
Kin, K. T.
;
Chien, C. H.
;
Lou, J. C.
In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-kappa) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QRD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.
Effect of supercritical fluids on field emission from carbon nanotubes
(2006)
Liu, P. T.
;
Tsai, C. T.
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Kin, K. T.
;
Chang, P. L.
;
Chen, C. M.
This paper proposes a novel method to enhance the emission characteristics of carbon nanotubes (CNTs). It is extremely possible for CNTs to adsorb moisture and other contaminants during the fabrication processes, leading to the degraded field emission characteristics. In this work, CNT emitters are activated with commonly used heating process and supercritical carbon dioxide (SCCO2) fluids technology for removing adsorbed residue moisture. Experimental results have demonstrated that the electrical stability and field emission enhancement of CNT emitters are effectively achieved by the SCCO2 fluids treatment compared to the heating process, due to the minimization of residuary moisture in CNTs.
Programming efficiency of stacked-gate flash memories with high-kappa dielectrics
(2006)
Chen, Y. Y.
;
Chien, C. H.
;
Kin, K. T.
;
Lou, J. C.
;
電子工程學系及電子研究所
The programming efficiency of high-permittivity (K) inter-poly dielectrics (IPDs) and tunnel dielectrics (TDs) on the stacked-gate flash memory performance is evaluated. By 2D MEDICI simulation, stacked-gate flash memories with high-K IPDs clearly exhibited significant improvement in operation speed over those with conventional oxide/nitride/oxide IPD programmed with either channel Fowler-Nordheim (CFN) or channel hot electron (CHE) injection. Choosing HfO2 as the IPD and using CFN programming scheme, the operating voltage can be reduced by more than 48% under a typical lops programming time. However, the effect of high-kappa TDs was quite different when compared with high-K IPDs. High-kappa TDs were only beneficial for memories programmed with CHE injection instead of CFN tunneling. The operating voltage can be reduced by more than 27% under lops programming time by choosing HfO2 as both the IPD and TD with CHE programming scheme. Due to the contrary improvement in programming schemes, high-kappa IPDs and TDs were suitable for next-generation NAND-and NOR-type stacked-gate flash memories, respectively.