Browsing by Author "King, Ming-Chu"

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New test structure to monitor contact-to-poly leakage in sub-90 nm CMOS technologies
(2008-05-01)
King, Ming-Chu
;
Chin, Albert
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The high leakage or even direct short between contact and gate is a serious problem after the feature sizes are shrunk to 65-nm technology and beyond. However, there is no suitable test structure to effectively monitor the leakage current between them. We have designed a new test structure which can eliminate the drawbacks of existing test structures and effectively monitor the leakage current between contact and gate electrode in state-of-the-art CMOS process technology.
RF power performance of asymmetric-LDD MOS transistor for RF-CMOS SOC design
(2007-06-01)
King, Ming-Chu
;
Chang, Tsu
;
Chin, Albert
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This letter presents a new asymmetric-lightly-doped-drain (LDD) metal oxide semiconductor (MOS) transistor that is fully embedded in a CMOS logic without any process modification. The radio frequency (RF) power performance of both conventional and asymmetric MOS transistor is measured and compared. The output power can be improved by 38% at peak power-added efficiency (PAE). The PAE is also improved by 16% at 10-dBm output power and 2.4 GHz. These significant improvements of RF power performance by this new MOS transistor make the RF-CMOS system-on-chip design a step further.