Browsing by Author "Ko, C. H."

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An AR-Based Manipulation System for Industrial Robots
(2017-01-01)
Su, Y. H.
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Liao, C. F.
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Ko, C. H.
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Cheng, S. L.
;
Young, K. Y.
Along with the progress of robot technologies, industrial robot manipulators have been employed for more versatile tasks. Consequently, the teaching pendant or keyboard may not meet the need of delicate manipulation. Intuitive manipulation and friendly human-robot interface are thus demanded. In this paper, we propose a novel manipulation system based on using augmented reality (AR) technique and implement it on a tablet PC. We also equip the system with a visual lead-through function, among others. Experiments are performed to demonstrate its effectiveness, along with questionnaire conducted to evaluate user response.
Development of an Effective 3D VR-Based Manipulation System for Industrial Robot Manipulators
(2019-01-01)
Su, Y. H.
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Xu, Y. Q.
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Cheng, S. L.
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Ko, C. H.
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Young, K. Y.
Along with fast progress in their ability and flexibility, more robots are introduced for automation, and applied for more complicated tasks. Consequently, it demands more versatile and advanced manipulative devices for task manipulation and teaching. We thus propose a novel manipulation system based on virtual reality (VR). This system is intended for achieving 3D manipulation in a real-time manner. VR is recognized for capable of providing immersive feeling for the user. Meanwhile, it also faces the challenge in making the VR environment as close as the real one. To tackle this, we propose building a point cloud model of the real environment and integrating it with the virtual one. Meanwhile, to ease the load of the user during manipulation, we also develop a user-friendly interface, including a mechanism that can adjust the resolution of the command according to task complexity. Experiments are conducted to evaluate system's performance, and questionnaires administered for acquiring user's feedback.
Effects of rapid thermal annealing on the structural properties of TiO(2) nanotubes
(2011-10-15)
Lin, J. Y.
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Chou, Y. T.
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Shen, J. L.
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Yang, M. D.
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Wu, C. H.
The structural properties of TiO(2) nanotubes with rapid thermal annealing (RTA) and traditional thermal annealing in O(2) were studied by X-ray diffraction (XRD) and Raman scattering measurements. From analyzing the line width of XRD and the correlation length of the Raman peak, we demonstrate that RTA can be an effective tool for amorphous-anatase transformation in TiO(2) nanotubes. The Raman peak redshifts and reduces its line width after thermal annealing and RTA, which may involves the reduction of oxygen-related defects. (C) 2011 Elsevier B. V. All rights reserved.
Effects of rapid thermal annealing on the structural properties of TiO2 nanotubes
(2011-10-15)
Lin, J. Y.
;
Chou, Y. T.
;
Shen, J. L.
;
Yang, M. D.
;
Wu, C. H.
The structural properties of TiO2 nanotubes with rapid thermal annealing (RTA) and traditional thermal annealing in O-2 were studied by X-ray diffraction (XRD) and Raman scattering measurements. From analyzing the line width of XRD and the correlation length of the Raman peak, we demonstrate that RTA can be an effective tool for amorphous-anatase transformation in TiO2 nanotubes. The Raman peak redshifts and reduces its line width after thermal annealing and RTA, which may involves the reduction of oxygen-related defects. (C) 2011 Elsevier B. V. All rights reserved.
Single Crystalline GaN Epitaxial Layer Prepared on Nano-Patterned Si(001) Substrate
(2011)
Huang, C. C.
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Chang, S. J.
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Kuo, C. H.
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Wu, C. H.
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Ko, C. H.
The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO(2) recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95% using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3569753] All rights reserved.
The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers
(2006-12-14)
Shu, G. W.
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Wang, C. K.
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Wang, J. S.
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Shen, J. L.
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Hsiao, R. S.
The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs.