Browsing by Author "Ko, CL"
Now showing 1 - 2 of 2
- Results Per Page
- Sort Options
Item type:Item, A CMOS dual-mode RF front-end receiver for GSM and WCDMA(2004) ;Ko, CL ;Kuo, MC ;Hsu, CM ;Kuo, CN交大名義發表A dual-mode, triple-band RF front-end receiver for GSM900, DCS1800 and WCDMA is presented. Because the system concepts of GSM and WCDMA are totally different from the standards, the chip uses low-IF and zero-IF receiver architecture for GSM and WCDMA, respectively. This chip consists of three parallel LNAs and down-conversion mixers with on-chip LO I/Q generations. The receiver front-end has been implemented in a standard 0.25um CMOs process and consumes about 30-mA from a 2.7-V power supply for all modes. The measured double-side band noise figure and voltage gain are 3dB, 36dB for the GSM900, 5.9dB, 31dB for the DCS1800, and ?-dB, 17.2dB for the WCDMA, respectively.Item type:Item, A CMOS dual-mode RF front-end receiver for GSM and WCDMA applications(2005-06-01) ;Ko, CL ;Kuo, MC ;Kuo, CN ;交大名義發表National Chiao Tung UniversityA dual-mode, triple-band RF front-end receiver for GSM900, DCS800 and WCDMA is presented in this paper. This chip uses low-IF and zero-IF receiver architectures for GSM and WCDMA respectively to fulfill the entirely different system requirements of the two standards. It consists of three parallel LNAs and down-conversion mixers with on-chip LO I/Q generations. The receiver front-end is implemented in a standard 0.25 mu m CMOS process and consumes about 30-mA from a 2.7-V power supply for all modes. The measured double-side band noise figure and voltage gain are 3 dB, 36 dB for the GSM900, 5.9 dB, 31 d13 for the DCS 1800, and 4.3 dB, 29.6 dB for the WCDMA, respectively.