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Browsing by Author "Ko, Hsin-Chun"

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    Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions
    (2008-06-03)
    Huang, Ting-Kai
    ;
    Chen, Ying-Chieh
    ;
    Ko, Hsin-Chun
    ;
    Huang, Hsin-Wei
    ;
    Wang, Chia-Hsin
    A simple galvanic reduction for direct growth of An nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4(aq) with Sn-(s) in the presence of CTAC((aq)) (cetyltrimethylammonium chloride) and NaNO3(aq), which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 mu m.