Browsing by Author "Ko, IH"

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Improvement in leakage current and breakdown field of Cu-comb capacitor using a silicon oxycarbide dielectric barrier
(2004)
Chiang, CC
;
Ko, IH
;
Chen, MC
;
Wu, ZC
;
Lu, YC
This work investigates in the first place, the improvement in leakage current and breakdown field of the copper metal-insulator-semiconductor (Cu-MIS) capacitor with a plasma-enhanced chemical vapor deposited (PECVD) amorphous silicon oxycarbide (alpha-SiCO, k = 3.7) dielectric barrier. This is followed by investigating the improvement in leakage current and breakdown field of the Cu-comb capacitor with a carbon-doped low-k PECVD organosilicate glass (k = 3) as the intermetal dielectric and an alpha-SiCO dielectric film as the Cu cap barrier. The leakage current and breakdown field of Cu-MIS and Cu-comb capacitors are dependent on the species of the dielectric barrier. The Cu-MIS and Cu-comb capacitors with an alpha-SiCO dielectric barrier exhibit a leakage current at least three orders of magnitude smaller than those with an amorphous silicon carbide (alpha-SiC, k = 4.4) dielectric barrier at an applied electric field of 1.6 MV/cm between 25 and 250 degreesC. Moreover, the breakdown field of the Cu-MIS and Cu-comb capacitors with an alpha-SiCO dielectric barrier, measured at 200 degreesC, are 60 and 25%, respectively, higher than that of the capacitors with an alpha-SiC barrier. The decreased leakage current and increased breakdown field of the Cu-MIS and Cu-comb capacitors with an alpha-SiCO dielectric barrier are attributed to the higher density, oxygen-improved film property, nonsemiconductor behavior, and lower fringe- or surface-electric field of the alpha-SiCO dielectric film. (C) 2004 The Electrochemical Society.
Leakage and breakdown mechanisms in cu damascene with a bilayer-structured a-SiCN/a-SiC dielectric barrier
(2003)
Chiang, CC
;
Ko, IH
;
Chen, MC
;
Wu, ZC
;
Lu, YC
This work investigates the leakage and breakdown mechanisms in the Cu damascene structure with a carbon-doped low-k PECVD organosilicate glass (OSG, k=3) as the intermetal dielectric (IMD) and an alpha-SiCN(k=5)/alpha-SiC(k=4) bilayer-structured dielectric film as the Cu-cap barrier. It is found that the leakage mechanism between Cu lines is dependent on the thickness ratio of the alpha-SiCN/alpha-SiC bilayer barrier in the Cu damascene structure. In the Cu damascene using an alpha-SiCN/alpha-SiC bilayer barrier of 40nm/10nm or 30nm/20nm bilayer thickness, the large leakage current (Frenkel-Poole emission) between Cu lines is attributed to the plenty of interfacial defects, such as cracks, voids, traps or dangling bonds at the alpha-SiC/OSG interface, which are generated by the larger tensile force of the thicker alpha-SiC film. On the other hand, the breakdown field and TDDB (time-dependent-dielectric-breakdown) lifetime of the Cu damascene reveal little dependence on the thickness ratio of the alpha-SiCN/alpha-SiC bilayer barrier, and the observed breakdown of the Cu damascene structure is presumably due to dielectric breakdown of the bulk OSG layer.
Leakage and breakdown mechanisms of Cu comb capacitors with bilayer-structured alpha-SiCN/alpha-SiC Cu-cap barriers
(2004-02-01)
Chiang, CC
;
Ko, IH
;
Chen, MC
;
Wu, ZC
;
Lu, YC
This work investigates the leakage and breakdown mechanisms in copper (Cu) comb capacitors with carbon-doped low-k plasma-enhanced chemical vapor deposited organosilicate glass (OSG; k = 3) as the intermetal dielectric and an alpha-SiCN (k = 5)/ alpha-SiC (k = 4) bilayer-structured dielectric film as the Cu-cap barrier. The leakage mechanism between Cu lines is dependent on the thickness ratio of the alpha-SiCN/alpha-SiC bilayer barrier. Using an alpha-SiCN/alpha-SiC bilayer barrier of 40 nm/10 nm or 30 nm/20 nm bilayer thickness, the increased leakage current (Frenkel-Poole emission) between Cu lines is attributed to the large number of interfacial defects, such as cracks, voids, traps or dangling bonds at the alpha-SiC/OSG interface, which are generated by the larger tensile force of the thicker alpha-SiC film. The Cu comb capacitor with an alpha-SiCN (50 nm)/alpha-SiC (2 nm) bilayer barrier exhibits a much smaller leakage current. The breakdown field and time-dependent dielectric breakdown lifetime of the Cu comb capacitor reveal little dependence on the thickness ratio of the alpha-SiCN/alpha-SiC bilayer barrier, and the observed breakdown of the Cu comb capacitor is presumably due to dielectric breakdown of the bulk OSG layer. (C) 2004 The Electrochemical Society.
Physical and barrier properties of PECVD amorphous silicon-oxycarbide from trimethylsilane and CO2
(2004)
Chiang, CC
;
Ko, IH
;
Chen, MC
;
Wu, ZC
;
Lu, YC
This work investigates the thermal stability and physical and barrier properties of amorphous silicon-carbide (alpha-SiC) and amorphous silicon-oxycarbide (alpha-SiCO) dielectric barriers deposited by plasma-enhanced chemical vapor deposition (PECVD) using trimethylsilane (3MS) precursor and He carrier gas. Films were deposited without and with various CO2 flow rates. The dielectric constant of the alpha-SiCO films decreased with increasing CO2 flow rate. Increasing CO2 flow rate also promotes better thermal stability, higher breakdown field, lower leakage current, and superior resistance to Cu diffusion through the films. The improved barrier property is attributed to the denser and less porous structure of the alpha-SiCO dielectric barrier upon CO2 addition. The alpha-SiCO barrier films deposited with the large (1200 Seem) CO2 flow rate exhibit the low k value of 3.7, thermal stability up to 550degreesC, room-temperature breakdown field of 8 MV/cm and leakage current densities of 10(-7) to 10(-6) A/cm(2) at 3 MV/cm, and a superb Cu barrier property. (C) 2004 The Electrochemical Society.