Browsing by Author "Kruchinin, V. N."

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Atomic and Electronic Structures of a-SiNx:H
(2019-11-01)
Gritsenko, V. A.
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Kruchinin, V. N.
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Prosvirin, I. P.
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Novikov, Yu N.
;
Chin, A.
The atomic structure and the electronic spectrum of a-SiNx:H films, which are grown by plasmachemical deposition with varied ammonia and monosilane flow rates, are studied. As a result of varied flow rates, stoichiometric parameter x is changed over wide limits, from 0.73 to 1.33. The films are analyzed by structural and optical techniques to determine stoichiometric parameter x and its influence on the valence band top and the band gap in the density of states. The experimental and calculated electronic structure parameters of a-SiNx are compared, and good agreement between them is achieved over wide film composition (parameter x) limits. The experimental data obtained can be used to simulate the electron transport characteristics in nonstoichiometric silicon nitride films, which is important for creating memristors based on them.
Charge transport mechanism of high-resistive state in RRAM based on SiOx
(2019-01-21)
Gismatulin, A. A.
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Kruchinin, V. N.
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Gritsenko, V. A.
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Prosvirin, I. P.
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Yen, T. -J.
Nonstoichiometric silicon oxide SiOx is a promising material for developing a new generation of high-speed, reliable flash memory based on the resistive effect. It is necessary to understand the electron transport mechanism of the high-resistive state in SiOx to develop a resistive memory element. At present, it is generally accepted that the charge transport of the high-resistive state in the Resistive Random Access Memory (RRAM) is described by the Frenkel effect. In our work, the charge transport of the high-resistive state in RRAM based on SiOx is analyzed with two contact-limited and five volume-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling, the Frenkel model of Coulomb trap ionization, the Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of the high-resistive state in the RRAM based on SiOx. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport of the highresistive state in the RRAM based on SiOx at temperatures above room temperature. Published under license by AIP Publishing.
Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM
(2015-11-01)
Kruchinin, V. N.
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Aliev, V. Sh.
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PerevaIov, T. V.
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Islamov, D. R.
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Gritsenko, V. A.
We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (similar to 10-15%) of hafnium sub-oxides HfOy (y < 2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed. (C) 2015 Elsevier B.V. All rights reserved.
Optical Properties of TiO2 Films Deposited by Reactive Electron Beam Sputtering
(2017-10-01)
Kruchinin, V. N.
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Perevalov, T. V.
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Atuchin, V. V.
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Gritsenko, V. A.
;
Komonov, A. I.
Titanium dioxide (anatase, a-TiO2) films have been prepared by electron beam sputtering of a TiO2 target in reactive atmosphere and their structural, microstructural, and optical properties were evaluated by reflection high- energy electron diffraction (RHEED) and x-ray diffraction (XRD) analyses, atomic force microscopy (AFM), and spectroscopic ellipsometry (SE). Different reflection models for determination of film optical parameters were tested and compared. The dispersive optical parameters were defined using the Tauc-Lorentz model by SE in the photon energy range of E = 1.12-4.96 eV. The films were transparent at E < 3 eV, but noticeable absorption was detected at E > 3 eV. The bandgap was estimated at the level of E (g) ae 3.44 eV.