Browsing by Author "Ku, Ming-Che"

Now showing 1 - 7 of 7

A 1-V operated polymer vertical transistor with high on/off current ratio
(2009)
Chao, Yu-Chiang
;
Tsai, Wu-Wei
;
Chen, Chun-Yu
;
Zan, Hsiao-Wen
;
Meng, Hsin-Fei
Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer
(2010-11-15)
Zan, Hsiao-Wen
;
Chen, Wei-Tsung
;
Hsueh, Hsiu-Wen
;
Kao, Shih-Chin
;
Ku, Ming-Che
This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a-IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3517506]
Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer
(2010-11-15)
Zan, Hsiao-Wen
;
Chen, Wei-Tsung
;
Hsueh, Hsiu-Wen
;
Kao, Shih-Chin
;
Ku, Ming-Che
This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a-IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3517506]
High-mobility polymer space-charge-limited transistor with grid-induced crystallinity
(2011-01-01)
Chao, Yu-Chiang
;
Niu, Mu-Chun
;
Zan, Hsiao-Wen
;
Meng, Hsin-Fei
;
Ku, Ming-Che
The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10 (5) cm(2)/Vs to 10 (3) cm(2)/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm(2) while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array. (C) 2010 Elsevier B. V. All rights reserved.
High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer
(2011-12-05)
Chao, Yu-Chiang
;
Chung, Chin-Ho
;
Zan, Hsiao-Wen
;
Meng, Hsin-Fei
;
Ku, Ming-Che
A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 x 10(4), and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated. (C) 2011 American Institute of Physics. [doi:10.1063/1.3668086]
Polymer space-charge-limited transistor as a solid-state vacuum tube triode
(2010-11-29)
Chao, Yu-Chiang
;
Ku, Ming-Che
;
Tsai, Wu-Wei
;
Zan, Hsiao-Wen
;
Meng, Hsin-Fei
We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3 x 10(5) at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/cm(2) with current gain greater than 1000. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3513334]
Polymer space-charge-limited transistor as a solid-state vacuum tube triode
(2010-11-29)
Chao, Yu-Chiang
;
Ku, Ming-Che
;
Tsai, Wu-Wei
;
Zan, Hsiao-Wen
;
Meng, Hsin-Fei
We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3 x 10(5) at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/cm(2) with current gain greater than 1000. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3513334]