Browsing by Author "Kumar, D."

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Characteristics of flexible and transparent Eu2O3 resistive switching memory at high bending condition
(2019-01-25)
Aluguri, R.
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Sailesh, R.
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Kumar, D.
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Tseng, Tseung-Yuen
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材料科學與工程學系
The characteristics of ITO/Eu2O3/ITO/PET transparent and flexible resistive switching memory are studied. The device exhibits superior characteristics such as device area-independent and forming-free resistive switching behavior with a resistance on/off ratio of 10(4), good retention of >10(4) s and high AC endurance of >10(7) cycles. The conduction mechanism of the high-resistance state is the Poole-Frenkel mechanism, while that of the low-resistance state is ohmic conduction. The electrical characteristics of the flexible device have shown excellent results up to 5 mm bending radius, at which a degradation in the on/off ratio of the memory window is observed, due to the change in the dielectric layer resistance. The resistive switching characteristics can be improved during bending up to the radius of 2 mm by the incorporation of an aluminum-doped zinc oxide layer in the device as the bottom electrode, proving its application in future flexible and transparent memory devices.
High Performance Resistive Switching Characteristics of SiN Films with a Cu/Ta/SiN/Cu/SiN/TiN Multilayer Structure
(2017-01-01)
Kumar, D.
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Tseng, T. Y.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
The bipolar resistive switching properties of SiN based conductive bridge random access memory (CBRAM) device are investigated for non-volatile memory applications in a Cu/Ta/SiN/Cu/SiN/TiN multilayer structure. The device shows good switching characteristics with set voltages between 0.8 V and 1.3 V and reset voltages between -0.3 V and -0.7 V with a variation of less than 0.1 V. The Cu/Ta/SiN/Cu/SiN/TiN multilayer CBRAM device exhibits excellent memory performance, such as long stable endurance cycles (> 4.5x10(3)) during the test without any degradation, good retention ability (> 10(4) s) at a temperature of 120 C-degrees with more than 10(2) on/off resistance ratio.
Metal oxide resistive switching memory: Materials, properties and switching mechanisms
(2017-01-01)
Kumar, D.
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Aluguri, R.
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Chand, U.
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Tseng, T. Y.
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電子工程學系及電子研究所
With the continuously changing landscape of the computer technologies, a new memory type is needed that will be fast, energy efficient and long-lasting. It shall combine the speed of random access memory (RAM) and nonvolatile in the same time. Resistive RAM (RRAM) is one of the most promising candidates in this respect. RRAM has attracted a great deal of attention owing to its potential as a possible replacement for flash memory in next-generation nonvolatile memory (NVM) applications. A brief summary of binary metal oxide RRAM is given in this review. We discuss the RRAM technology development based on published papers, including the mechanism of resistive switching in transition metal oxides, resistive switching materials, device structure, properties, and reliability such as endurance and retention of the device. We also provide possible solutions through innovations in device materials, structures, and understanding the device physics.
One bipolar transistor selector - One resistive random access memory device for cross bar memory array
(2017-09-01)
Aluguri, R.
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Kumar, D.
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Simanjuntak, F. M.
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Tseng, T. Y.
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電子工程學系及電子研究所
Abipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector indicated good selectivity of about 10(4) with high retention and long endurance showing its usefulness in cross bar RRAM devices. Zener tunneling is found to be the main conduction phenomena for obtaining high selectivity. 1BT-1R device demonstrated good memory characteristics with non-linearity of 2 orders, selectivity of about 2 orders and long retention characteristics of more than 10(5) sec. One bit-line pull-up scheme shows that a 650 kb cross bar array made with this 1BT1R devices works well with more than 10 % read margin proving its ability in future memory technology application. (C) 2017 Author(s).